A kind of method of ion implantation regulating and controlling the resistance value of tantalum nitride thin film resistor
A technology of thin film resistors and ion implantation, which is applied in the direction of resistors, resistor manufacturing, circuits, etc., can solve problems such as the performance impact of tantalum nitride, and achieve the effect of controlling the resistance value
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Embodiment 1
[0019] A method for regulating and controlling the resistance value of a tantalum nitride film resistance by ion implantation, comprising the following steps:
[0020] Step 1: Place a tantalum nitride film resistor with an initial resistance value of 33.16Ω and an initial nitrogen atom content of 48% in the tantalum nitride film in the ion implantation device;
[0021] The second step: evacuate to 1.0×10-4Pa;
[0022] Step 3: Fill the nitrogen with a purity of 99.99%, and maintain the vacuum of the chamber at 0.1Pa;
[0023] Step 4: Start the ion implantation power supply, set the voltage to 300V, and ion implantation time to 1min;
[0024] Step 5: After the injection, continue to fill with nitrogen until 1.01×105Pa;
[0025] Step 6: Take out the thin film resistor.
[0026] The nitrogen atom content of the thin film resistor is tested by EDS, and the test result shows that the nitrogen atom content is 51.0%; the resistance value of the thin film resistor is measured, and t...
Embodiment 2
[0028] A method for regulating and controlling the resistance value of a tantalum nitride film resistance by ion implantation, comprising the following steps:
[0029] Step 1: Place a tantalum nitride film resistor with an initial resistance value of 42.35Ω and an initial nitrogen atom content of 52% in the tantalum nitride film in the ion implantation device;
[0030] The second step: vacuumize to 1.0×10-5Pa;
[0031] Step 3: Fill the nitrogen with a purity of 99.99%, and maintain the vacuum of the cavity at 10Pa;
[0032] Step 4: Start the ion implantation power supply, set the voltage to 5000V, and ion implantation time to 1min;
[0033] Step 5: After the injection, continue to fill with nitrogen until 1.01×105Pa;
[0034] Step 6: Take out the thin film resistor.
[0035] The nitrogen atom content of the thin film resistor is tested by EDS, and the test result shows that the nitrogen atom content is 58.1%; the resistance value of the thin film resistor is measured, and t...
Embodiment 3
[0037] A method for regulating and controlling the resistance value of a tantalum nitride film resistance by ion implantation, comprising the following steps:
[0038] Step 1: Place a tantalum nitride film resistor with an initial resistance value of 42.18Ω and an initial nitrogen atom content of 48% in the tantalum nitride film in the ion implantation device;
[0039] The second step: evacuate to 1.0×10-4Pa;
[0040] Step 3: Fill the nitrogen with a purity of 99.99%, and maintain the vacuum of the chamber at 0.1Pa;
[0041] Step 4: ion implantation power supply, set the voltage to 300V, and ion implantation time to 3h;
[0042] Step 5: After the injection, continue to fill with nitrogen until 1.01×105Pa;
[0043] Step 6: Take out the thin film resistor.
[0044] The nitrogen atom content of the thin film resistor is tested by EDS, and the test result shows that the nitrogen atom content is 57.3%; the resistance value of the thin film resistor is measured, and the resistanc...
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