Silicon material heat source structure and manufacturing method thereof
A technology of silicon material and silicon structure, which is applied in the field of heat source structure of silicon material and its production, can solve the problems of insufficient concentration of heat propagation direction, non-concentration of heat radiation range, lack of directionality of heat generation, etc., to improve heat utilization rate, heat generation Uniform and good heat insulation effect
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[0031] Such as Figure 10 The silicon material heat source structure shown is formed by bonding a cantilever beam structure heating element and a support cavity with a high thermal resistance reflective film. The cantilever beam structure heating element is made based on the SOI structure, and the order from top to bottom is The heating metal layer, silicon dioxide layer, single crystal silicon layer, insulating material buried layer (silicon dioxide layer) and substrate bulk silicon layer, its preparation method is as follows:
[0032] a. Use photolithography and lift-off process (lift-off) to make the heating element on the SOI structure: first, a layer of silicon dioxide is oxidized on the surface of the SOI structure, and the following is obtained: figure 1 The structure shown in , from top to bottom is a silicon dioxide layer, a single crystal silicon layer, an insulating material buried layer (silicon dioxide layer) and a substrate bulk silicon layer, and then the oxidiz...
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