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Method for reducing aluminum bar gap in thick aluminum evaporating coating process of integrated circuit

An evaporation coating and integrated circuit technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid devices, etc., can solve problems such as voids in the aluminum layer, achieve high mobility, facilitate popularization and application, and improve the effect of voids

Active Publication Date: 2015-03-11
FUJIAN FUSHUN MICROELECTRONICS
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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for improving the gap of the aluminum strip in the integrated circuit thick aluminum evaporation coating process, which can effectively improve the aluminum layer void phenomenon after the traditional thick aluminum (aluminum film thickness exceeds 2.5 μm) coating, so as to solve the problem of wetness in the back road. The problem of chipping of aluminum bars after etching

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  • Method for reducing aluminum bar gap in thick aluminum evaporating coating process of integrated circuit
  • Method for reducing aluminum bar gap in thick aluminum evaporating coating process of integrated circuit
  • Method for reducing aluminum bar gap in thick aluminum evaporating coating process of integrated circuit

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Embodiment Construction

[0021] In order to further illustrate the present invention, through the comparison of the traditional pure aluminum process and the aluminum alloy process of the present invention, the improvement of the thick aluminum gap by the optimized aluminum alloy process is illustrated in conjunction with the accompanying drawings. Specific steps are as follows:

[0022] step one, Complete the front lead hole etching process.

[0023] Explanation: The dielectric under the metal layer is generally an oxide layer or silicon nitride, such as the dielectric layer I in the figure.

[0024] Step two, A 2.5um metal layer is deposited.

[0025] In order to describe the specific implementation mode and effect of the present invention more practically, the MARK 50 evaporation platform of CHA Industries Company was selected as the experimental machine. The machine adopts typical parameter settings, the cavity vacuum is 1.0E-6Torr, the substrate temperature is 130°C, and the evaporation rat...

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Abstract

The invention discloses a method for reducing an aluminum bar gap in the thick aluminum evaporating coating process of an integrated circuit. The method is that alloy aluminum is used as an evaporating source material. The method for reducing the aluminum bar gap in the thick aluminum evaporating coating process of the integrated circuit has the advantages that the phenomenon of holes in an aluminum layer after coating of the thick aluminum (aluminum film exceeding 2.5 microns in thickness) in the prior art can be effectively reduced, and thus the problem of aluminum bar gap caused by subsequent wet etching can be solved; and the method is simple and easy to be conducted, and is worthy of popularization and application.

Description

technical field [0001] The invention belongs to the field of integrated circuit production, and in particular relates to a method for improving the gap of aluminum strips in the integrated circuit thick aluminum evaporation coating process. Background technique [0002] In the manufacturing process of integrated circuits, aluminum is widely used in metal contact and interconnection materials due to its good electrical conductivity, easy formation of low-resistance ohmic contacts with silicon materials, and good adhesion to silicon and silicon dioxide. With the continuous enrichment of semiconductor device products, the requirements for aluminum films are also higher. For high-voltage power tubes, its operating voltage is higher. If the current is large, the current density per unit area of ​​the aluminum film will be too high, which is easy to burn, so the thickness of the aluminum film should be increased. [0003] There are many methods for metal coating of integrated c...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02697H01L21/033
Inventor 林强林立桂梅海军熊爱华石建武
Owner FUJIAN FUSHUN MICROELECTRONICS
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