Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of Cu2-xSe nanochip

A cu2-xse, nano-chip technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of high cost of organic solvents, unfavorable industrial production, pollution, etc., and achieve easy dissolution , Conducive to large-scale industrial production and the effect of solving environmental pollution

Inactive Publication Date: 2015-03-18
天津恒电空间电源有限公司 +1
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such organic solvents are expensive, polluting, and require continuous protection measures when heated, which is not conducive to large-scale industrial production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of Cu2-xSe nanochip
  • Preparation method of Cu2-xSe nanochip
  • Preparation method of Cu2-xSe nanochip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to further understand the content of the invention, features and effects of the present invention, the following embodiments are exemplified and described in detail with the accompanying drawings as follows:

[0029] Preparation process of the present invention:

[0030] The raw materials used in the present invention all adopt commercially available raw materials whose purity is analytically pure.

[0031] (1) Prepare copper precursor solution:

[0032] Put 0.02mol of CuCl 2 ·2H 2 O Add to 10mL of triethylene glycol solvent, stir for 1h, CuCl 2 ·2H 2 O is completely dissolved, forming a green copper precursor solution;

[0033] (2) Prepare selenium precursor solution:

[0034] Put 0.01mol of Se powder and 0.1g PVP solvent Put it into a three-necked bottle, inject 40 mL of triethylene glycol solvent, add 0.5 mL of Ethylenediamine reducing agent , nitrogen is introduced to ensure the inert gas atmosphere in the device; the three-necked bottle is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of a Cu2-xSe chip. The preparation method comprises following steps: (1) preparing a copper precursor solution; (2) preparing a selenium precursor solution; (3) performing filling reflux to generate the Cu2-xSe chip; and (4) washing the Cu2-xSe chip and performing liquid removing to obtain the Cu2-xSe chip in the invention. In the preparation method, a polyol is employed as a solvent, ethanediamine is employed as a reducing agent, and an inorganic copper salt is employed as a precursor so that dissolution is easy to carry out and the preparation method is low in requirement on devices. Not only is a problem of environmental pollution solved but also a product preparation cost is reduced. By means of a solution chemical synthesis method under normal pressure, the preparation method is simple in technology, is easy to control, is less in discharge and is good in safety. The Cu2-xSe chip is good in dispersing performance, is uniform in appearance, is high in crystallization degree and is suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the technical field of metal selenium compound materials, in particular to a Cu 2-x Preparation method of Se nanowafers. Background technique [0002] In recent years, nanoscale inorganic semiconductors have attracted more research interest due to the effect of size and shape on physical and chemical properties. Metal selenide materials are promising for applications in optics, optoelectronics, catalysts, and biosensors (see Lijuan Zhao, Linfeng Hu, and Xiaosheng Fang, Adv.Funct.Mater.22, 1551 and S.P.Gubin, N.A.Kataeva, and G.B. Khomutov, Russian Chemical Bulletin. 54, 827). [0003] Cu 2-x Se, as a group I–VI semiconductor compound, is a P-type semiconductor with unique optoelectronic properties. Because of its wide application in electronic and optoelectronic equipment, it has attracted everyone's attention. Copper selenide is widely used in solar cell filters, photoelectric conversion, thermoelectrics, nanoswitches, su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B19/04B82Y30/00
Inventor 王鑫
Owner 天津恒电空间电源有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com