Light-transmitting conductive film and touch panel including light-transmitting conductive film
A light-transmitting, conductive film technology, applied to the conductive layer on the insulating carrier, electrical digital data processing, data processing input/output process, etc., can solve the problem that the light-transmitting conductive film is difficult to form patterns, etc., to achieve excellent Etching effect
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Embodiment 1
[0158] Formation of 20nm SiO on a PET resin substrate with a thickness of 125μm 2 layer, and then form a 16nm indium tin oxide film. Specifically, using a sintered body material composed of indium oxide: 95% by weight and tin oxide: 5% by weight as a target, SiO was formed by DC magnetron sputtering. 2 layer on which a light-transmitting conductive layer is formed. It heat-processes in air|atmosphere, and finally obtains the translucent conductive film of this invention.
[0159] The translucent conductive layer was formed as follows. Vacuum the chamber to 3.0×10 -4 Below Pa, then introduce oxygen and argon into the chamber to make the oxygen partial pressure reach 4.5×10 -3 Pa, the pressure in the chamber is 0.2-0.3 Pa, and the film forming temperature is set at 50° C. for sputtering treatment.
[0160] Then, the film which heat-processed at 150 degreeC in air|atmosphere for 60 minutes was evaluated by XRD. The average value of the function f(α) is 1.07. In addition, t...
Embodiment 2
[0166] Formation of 20nm SiO on a PET resin substrate with a thickness of 125μm 2 layer, forming a 22nm indium tin oxide film. Other than that, it carried out similarly to Example 1, and obtained the translucent conductive film of this invention. As a result of evaluation by XRD, the average value of the function f(α) was 2.86.
Embodiment 3
[0168] Formation of 20nm SiO on a PET resin substrate with a thickness of 125μm 2 layer, forming a 28nm indium tin oxide film. Except for that, it carried out similarly to Example 1, and obtained the translucent conductive film of this invention. As a result of evaluation by XRD, the average value of the function f(α) was 4.15.
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Abstract
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