Three-dimensional integrated wafer-level package structure and package method for high-frequency IPD (Integrated Passive Device) module
A technology of wafer-level packaging and three-dimensional integration, which is applied in the direction of additional/integrated components of printed circuit boards, printed circuits assembled with electrical components, printed circuits connected with non-printed electrical components, etc., which can solve the problem of crowded PCB wiring areas, increased Problems such as large signal distributed capacitance and increased wiring amount, etc., achieve the effect of miniaturization of devices and systems, reduction of interference, and reduction of area
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[0033] The present invention will be further described below in conjunction with specific drawings.
[0034] like Figure 13 As shown: the high-frequency IPD module three-dimensional integrated wafer-level packaging structure of the present invention includes a PCB system board 1, a low-frequency IPD package 2 is stacked on the PCB system board 1, and a radio frequency IPD package 3 is stacked on the low-frequency IPD package 2;
[0035] The low-frequency IPD package 2 includes a first high-resistance silicon wafer 4, a low-frequency IPD circuit 7 is set on the front of the first high-resistance silicon wafer 4, and a low-frequency IPD circuit 7 is arranged on the front of the first high-resistance silicon wafer 4. The surface is covered with a protective first passivation layer 8, and the first TSV hole 5 is formed by etching on the back of the first high-resistance silicon wafer 4, and the first TSV hole 5 is filled with the first conductive material 6. A first metal pad 9 ...
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