Additive B capable of controlling TSV deep hole copper plating crystallization and growth mode and application of additive B

An additive and copper plating technology, which is applied in the field of additive B to change the TSV micropore copper plating filling method and crystallization, can solve problems such as different filling effects, and achieve the effects of reducing subsequent process costs, simple formula, and reducing pressure

Inactive Publication Date: 2015-04-22
SHANGHAI SINYANG SEMICON MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, since TSV deep holes have different aspect ratios, different sizes, and different hole array densities, etc., the effect on TSV additives, diffusion distribution, and mechanical or environmental parameters during electroplating copper deposition, such as: temperature, pretreatment method, stirring method, and the time of each stage of electroplating deposition steps and electroplating current, etc. put forward higher requirements, because it may lead to the final completely different filling effect

Method used

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  • Additive B capable of controlling TSV deep hole copper plating crystallization and growth mode and application of additive B
  • Additive B capable of controlling TSV deep hole copper plating crystallization and growth mode and application of additive B
  • Additive B capable of controlling TSV deep hole copper plating crystallization and growth mode and application of additive B

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Preparation of Additive B: Add 20g of polyethylene glycol 6000 to 973.8g of ultrapure water, stir at 40°C for 15min; then, add 1g of PO-EO quaternary ammonium compound and 0.2g of mercaptoimidazole while stirring Sodium propanesulfonate, 5 g of low molecular weight polyethyleneimine (Lupasol G35). After continuous stirring for 1 h, the plating solution was prepared for electroplating.

[0031] Preparation of plating solution: In the ultrapure copper methanesulfonate electroplating solution, add additives A at 3ml / L and B at 5ml / L in sequence, and stir for 30min.

[0032] Take the 20×100μm hole pattern as an example:

[0033] Pretreatment conditions: under the condition of vacuum degree of 0~0.2 torr, keep vacuuming for 5 minutes, soak in pure water for 1-10 minutes;

[0034] Basic plating solution ratio: Cu=80g / L H=20g / L

[0035] Additive ratio: A:B=3:5

[0036] Experimental conditions: Temperature=22-25 ℃ Flow=15 L / min Cathode speed=50 RPM

[0037] Electroplating ...

Embodiment 2

[0039] Take the 6×60μm hole pattern as an example:

[0040]Preparation of Additive B: Add 10g polyethylene glycol 200 and 1g polyethylene glycol 2000 to 978g ultrapure water, stir at 40°C for 15min; then, add 5g of PO-EO quaternary ammonium salt while stirring Compounds, 5 g of high molecular weight vinylimine homopolymer (Lupasol G100) and 1 g of water-soluble 2-mercaptobenzimidazole. After continuous stirring for 1 h, the plating solution was prepared for electroplating.

[0041] Plating solution preparation: Add 2ml / L Xinyang Additive A and 10ml / L Additive B to the basic copper methanesulfonate plating solution, and start electroplating after stirring for 30 minutes.

[0042] Pretreatment conditions: under the condition of vacuum degree of 0~0.2 torr, vacuumize for 5 minutes, soak in pure water for 1-10 minutes;

[0043] VMS ratio: Cu=110g / L H=15g / L

[0044] Additive ratio: A:B=2:10

[0045] Experimental conditions: Temperature=22-25 ℃ Flow=15 L / min Cathode speed=50 RPM...

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Abstract

The invention discloses an additive B capable of controlling the TSV deep hole copper plating crystallization and the growth mode and an application of the additive B. The additive B comprises, by weight, 1%-10% of one of polyethylene glycol and polyvinyl alcohol with the molecular weight being 200 to 20,000 or the mixture of polyethylene glycol and polyvinyl alcohol with different molecular weights, 0.01%-10% of an EO-PO-EO-quaternary ammonium compound, 0.1%-5% of a thioimidazole compound, 0.1%-10% of polyethylenimine and derivative thereof and the balance water. By means of the additive B, the TSV deep hole electroplating copper filling mode can be changed, the crystal habit of copper is changed, and thus defect-free micro protrusion filling along holes of TSV micro holes can be achieved; the copper crystallization shape and the hole opening growth mode are effectively controlled, the surface copper thickness is reduced, TSV deep hole opening micro protrusions are also reduced, hence, the subsequent CMP processing pressure is lightened, the subsequent processing cost is lowered, and the yield and the production efficiency are greatly improved.

Description

technical field [0001] The invention relates to an electroplating copper additive, in particular to an additive B capable of changing the filling mode and crystallization of TSV microhole copper plating. Background technique [0002] As an advanced package, TSV (TSV, Through-Silicon-Via) will replace the previous IC package bonding and bump overlay technology. Integration enables TSV to achieve the highest density, the smallest size, and greatly improve the chip running speed and reduce power consumption. consumption and the reduction of the overall cost of semiconductor packaging in the future. [0003] For the TSV electroplating copper filling process, the electroplating technology requirements are relatively high. The key is that for wafers with different TSV depth ratios, different sizes, and different hole array density distributions, it is not only required that each TSV hole can be filled uniformly and without defects. At the same time, it is required that the electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38
CPCC25D3/38
Inventor 王溯于仙仙
Owner SHANGHAI SINYANG SEMICON MATERIALS
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