Additive B capable of controlling TSV deep hole copper plating crystallization and growth mode and application of additive B

Abstract

The invention discloses an additive B capable of controlling the TSV deep hole copper plating crystallization and the growth mode and an application of the additive B. The additive B comprises, by weight, 1%-10% of one of polyethylene glycol and polyvinyl alcohol with the molecular weight being 200 to 20,000 or the mixture of polyethylene glycol and polyvinyl alcohol with different molecular weights, 0.01%-10% of an EO-PO-EO-quaternary ammonium compound, 0.1%-5% of a thioimidazole compound, 0.1%-10% of polyethylenimine and derivative thereof and the balance water. By means of the additive B, the TSV deep hole electroplating copper filling mode can be changed, the crystal habit of copper is changed, and thus defect-free micro protrusion filling along holes of TSV micro holes can be achieved; the copper crystallization shape and the hole opening growth mode are effectively controlled, the surface copper thickness is reduced, TSV deep hole opening micro protrusions are also reduced, hence, the subsequent CMP processing pressure is lightened, the subsequent processing cost is lowered, and the yield and the production efficiency are greatly improved.

Description

technical field [0001] The invention relates to an electroplating copper additive, in particular to an additive B capable of changing the filling mode and crystallization of TSV microhole copper plating. Background technique [0002] As an advanced package, TSV (TSV, Through-Silicon-Via) will replace the previous IC package bonding and bump overlay technology. Integration enables TSV to achieve the highest density, the smallest size, and greatly improve the chip running speed and reduce power consumption. consumption and the reduction of the overall cost of semiconductor packaging in the future. [0003] For the TSV electroplating copper filling process, the electroplating technology requirements are relatively high. The key is that for wafers with different TSV depth ratios, different sizes, and different hole array density distributions, it is not only required that each TSV hole can be filled uniformly and without defects. At the same time, it is required that the electr...

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Problems solved by technology

[0004] However, since TSV deep holes have different aspect ratios, different sizes, and different hole array densities, etc., the effect on TSV additives, diffusion distribution, and mechanical or environmental parameters during electroplating copper deposition, such as: temperature, pretreatment method, stirring method, and the time of each stage of electroplating deposition steps and electroplating current, etc. put forward higher requirements, because it may lead to the final completely different filling effect

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