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Method for quickly removing boron from silicon by introducing gas to Al-Si alloy

An alloy and fast technology, applied in chemical instruments and methods, silicon compounds, non-metallic elements, etc., can solve the problem of high energy consumption in the refining process, achieve the effects of shortening solidification time, rapid solidification, and improved processing capacity

Inactive Publication Date: 2015-04-29
INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above blowing process is to directly feed the reaction gas into the molten silicon, requiring the melting temperature of the reaction to be above the melting point of silicon, which makes the energy consumption of the refining process relatively high.

Method used

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  • Method for quickly removing boron from silicon by introducing gas to Al-Si alloy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Mix 90g of silicon with 210g of metal aluminum (purity 99.99%), place in an alumina crucible (graphite crucible with outer shell), and place in an intermediate frequency induction furnace. Adjust the heating power to 0.8kW and maintain the temperature at 1223K to completely melt the alloy. Pour Ar-H into the alloy melt 2 Mixed gas, where Ar and H 2 The gas flow rate is 1:1, the gas flow rate is 5×10 -9 m 3 / s, ventilation time is 9000s, then take out the crucible from the furnace, quickly cool and solidify to obtain the alloy sample, treat the alloy sample with hydrochloric acid, dissolve the metal aluminum in the alloy sample, obtain refined silicon, analyze the refined silicon with ICP-OES The content of boron. See Table 1 for comparison of purification results.

[0020] Table 1

[0021] Impurity element

Embodiment 2

[0023] Mix 90g of silicon with 210g of metal aluminum (purity 99.99%), place in an alumina crucible (graphite crucible with outer casing), and place in an intermediate frequency induction furnace. Adjust the heating power to 1.2kW and maintain the temperature at about 1473K to completely melt the alloy. Then pass H into the alloy melt 2 , Where H 2 The gas flow rate is 3.3×10 -9 m 3 / s, aeration time of 12600s, then take out the crucible from the furnace, quickly cool and solidify to obtain an alloy sample, treat the alloy sample with hydrochloric acid, dissolve the metal aluminum in the alloy sample, obtain refined silicon, analyze the refined silicon with ICP-OES The content of boron. See Table 2 for comparison of purification results.

[0024] Table 2

[0025] Impurity element

Embodiment 3

[0027] Mix 90g of silicon with 210g of metallic aluminum (purity 99.99%), place it in an alumina crucible (graphite crucible with jacket), and place it in an intermediate frequency induction furnace. Adjust the heating power to 2.0kW and maintain the temperature at about 1673K to completely melt the alloy. Then pass H into the alloy melt 2 , Where H 2 The gas flow rate is 1.7×10 -9 m 3 / s, ventilation time is 1800s, then the crucible is taken out of the furnace, and the alloy sample is obtained by rapid cooling and solidification. The alloy sample is treated with hydrochloric acid to dissolve the metal aluminum in the alloy sample to obtain refined silicon, and analyze the refined silicon by ICP-OES The content of boron. See Table 3 for comparison of purification results.

[0028] table 3

[0029] Impurity element

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Abstract

The invention discloses a method for quickly removing boron from silicon by introducing gas to Al-Si alloy, and belongs to the field of high-purity silicon production. The method is a process of refining silicon to remove boron in an alloy melt containing a reaction gas. The method comprises the steps of carrying out liquid-state alloying treatment on silicon and aluminum-based alloy melt; then, introducing the reaction gas, maintaining a certain blowing period, taking out the alloy melt, quickly solidifying, and pickling and separating to obtain high-purity silicon. According to the method, the operation temperature is 873-1673K, and is lower than the melting temperature of silicon. Compared with a traditional aluminum-silicon alloying method, the method has the advantages that the boron removal rate can be increased to 75 percent from 46 percent, the solidifying treatment time can be shorted, and the production efficiency can be improved.

Description

Technical field [0001] The invention belongs to the technical field of the production of high-purity silicon, and particularly relates to a method for rapidly removing boron in silicon, which can quickly remove boron impurities in silicon through aeration treatment of an Al-Si alloy. Background technique [0002] Solar energy has become an important way to solve energy shortage in the future because of its wide distribution, abundant reserves, clean and pollution-free characteristics. At present, more than 90% of solar cells use crystalline silicon as the main raw material. From a cost point of view, the purification and preparation cost of silicon materials once accounted for more than 50% of the solar cell, which is still an important part of the cell cost. Solar-grade silicon has extremely strict requirements on impurity content, and high-content impurity elements will be contained in silicon. The formation of deep energy level centers or deposits affects the electrical prope...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037
Inventor 李京伟陈健白枭龙班伯源张涛涛李彦磊
Owner INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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