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Etching fluid for forming texture and texture-forming method using same

A technology of etching liquid and compound, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem that etching liquid cannot be directly used on silicon substrates, etc., and achieve the effect of high safety and improved performance

Active Publication Date: 2015-04-29
DAI ICHI KOGYO SEIYAKU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to meet the various requirements mentioned above, various methods other than IPA have been proposed as components of the etchant for texture formation, but the current situation is that it is not yet possible to comprehensively satisfy quality control such as excellent texture formation and concentration control at the time of use. Etching solution or additives that are also easy to etch (Patent Documents 1 to 6)
[0007] In addition, in recent years, the grinding method of silicon substrates is transitioning from the current free abrasive method to the fixed abrasive method. Since the surface states of the substrates ground by these methods are different from each other, the following problems will also arise: the current Etching solutions that can be used for silicon substrates manufactured by free abrasive methods sometimes cannot be used directly for silicon substrates manufactured by fixed abrasive methods

Method used

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  • Etching fluid for forming texture and texture-forming method using same
  • Etching fluid for forming texture and texture-forming method using same
  • Etching fluid for forming texture and texture-forming method using same

Examples

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Embodiment

[0073] Hereinafter, the present invention will be further specifically described through examples, but the present invention is not limited by the following examples.

[0074] [Example, comparative example]

[0075] An aqueous solution obtained by mixing an alkali component (A), a phosphonic acid derivative (B), and a compound (C) in the ratios shown in the following tables was prepared to prepare an etching solution. Ion-exchanged water was used as water for preparation.

[0076] These etching solutions were heated to 80°C, and the single crystal silicon substrate wafers (hereinafter referred to as "wafers") which were ground by either the free abrasive method or the fixed abrasive method respectively shown in the table were ground. ”) was immersed therein for 20 minutes to perform etching treatment, washed with water and then dried, and the evaluation of the texture structure and the measurement of the reflectance were performed as follows. The results are shown in each ta...

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Abstract

Provided are: an etching fluid for forming texture on a silicon substrate, applicable to both silicon substrates manufactured using a loose-abrasive grain method and silicon substrates manufactured using a fixed-abrasive grain method, which can stably form a good texture uniformly on the substrate surface, and does not have volatility of additive components in the normal usage temperature range of 60-95°C; and an etching method. An etching fluid is used that contains an alkali component (A), a phosphonic acid derivative (B) or salt thereof, and a compound (C) having at least one type of group selected from a group comprising a carboxyl group, a sulfo group, groups thereof forming a salt, and a carboxymethyl group.

Description

technical field [0001] The present invention relates to an etching solution and an etching method for forming a textured uneven structure on the surface of a silicon substrate. Background technique [0002] A crystalline silicon substrate used for a solar cell is generally treated with a surface structure treatment called texture in order to reduce the reflectance of light on the substrate surface and efficiently absorb light. [0003] At present, a single crystal silicon substrate is usually etched by immersing it in an alkaline solution such as sodium hydroxide or potassium hydroxide to form a textured structure such as a pyramid. Other additives can form a textured structure of uniform size or shape. [0004] As an etchant for forming such a texture, for example, a solution obtained by mixing an aqueous solution of sodium hydroxide or potassium hydroxide with isopropyl alcohol (IPA) is generally used. The texture can be formed by immersing the silicon substrate for 10-3...

Claims

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Application Information

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IPC IPC(8): H01L31/0236
CPCH01L31/02363
Inventor 中川和典气贺泽繁桥本贺之
Owner DAI ICHI KOGYO SEIYAKU CO LTD
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