High-voltage bidirectional ESD protective device based on longitudinal NPN structure

Abstract

The invention relates to a high-voltage bidirectional ESD protective device based on a longitudinal NPN structure. The high-voltage bidirectional ESD protective device based on the longitudinal NPN structure comprises a P type substrate, a first high-voltage N type trap, a second high-voltage N type trap, a first P-body injection region, a second P-body injection region, a first N+ injection region, a first P+ injection region, a second N+ injection region, a third N+ injection region, a second P+ injection region, a fourth N+ injection region and a plurality of oxide isolation layers. Compared with the prior art, the reverse PN junction of the inside longitudinal NPN structure is triggered to conduct under the forward or negative ESD pulse effect, and meanwhile, the positive PN junction in the other N trap is conducted, an ESD current discharge route composed of a longitudinal NPN transistor and a forward diode in a series mode would be generated, the voltage of the device can be kept temporarily through respectively stretching the emitting zone width of each of two NPNS and separately changing the forward or reverse ESD pulse, and the device use environment flexibility is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit electrostatic discharge (ESD-Electrostatic Discharge) protection, in particular to a high-voltage bidirectional ESD protection device with a vertical NPN structure that can be used to improve the reliability of the ESD protection of an IC high-voltage port on a chip. Background technique [0002] The phenomenon of electrostatic discharge (ESD) widely exists in nature, and it is also one of the important reasons for the failure of integrated circuit products. Integrated circuit products are easily affected by electrostatic discharge during their manufacturing and assembly processes, resulting in reduced reliability or even damage to the product. Therefore, research on electrostatic discharge protection devices and protection circuits with high reliability and strong electrostatic protection performance has a non-negligible role in improving the yield and reliability of integrated circuits. [000...

AI Technical Summary

Problems solved by technology

Generally, the design of an ESD protection device needs to consider two aspects: one is that the ESD protection device must be able to discharge a large current; low voltage level

[0004] Devices usually used for ESD protection include diodes, GGNMOS (gate-grounded NMOS), SCR (silicon controlled silicon), etc. However, in some special circuits and special applications, the breakdown voltage of ESD protection devices is required to be high, and the current The discharge capability is strong, and the two-way ESD protection capability to the ground needs to be improved at the same time

Images