Substrate processing apparatus and method

Abstract

The present invention relates to a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a process chamber, a substrate support unit, an antenna plate, a dielectric plate, a wavelength shortening plate, a gas supply unit, and the like. The gas supply unit arranges the excitation gas injection unit at a position higher than the process gas injection unit and injects the excitation gas containing an inert gas at a position higher than the process gas, thereby preventing damage to the dielectric plate and generating high-density plasma. Body, can prevent process performance degradation in the process under the process pressure of 50mmTorr or more or the process using hydrogen gas.

Description

technical field [0001] The present invention relates to a substrate processing apparatus and method, and more specifically relates to an apparatus and method for processing a substrate using plasma (APPARATUS AND METHOD FOR TREATING SUBSTRATE). Background technique [0002] Plasma refers to an ionized gas state that is generated by high temperature, strong electric field or high-frequency electromagnetic field (RF Electromagnetic Fields), and is composed of ions or electrons, free radicals, etc. The semiconductor element manufacturing process uses plasma to perform a thin film evaporation process. The thin film deposition process is performed by evaporating ion particles contained in the plasma to form a thin film on the substrate. [0003] In general, a plasma processing apparatus supplies a process gas and a plasma excitation gas into a chamber, and excites the process gas into a plasma state by high-frequency power applied from an antenna plate. Process gas injection ho...

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Problems solved by technology

[0004] However, when different gases are sprayed from the same height position, if the distance between the dielectric plate and the substrate support unit is less than a certain distance, the closer to the dielectric plate, the higher the temperature of the electrons, so in order to prevent damage to the substrate, use Low power, so high-density plasma cannot be generated, and if the distance between the dielectric plate and the substrate support unit exceeds a certain distance, since high power is used to form a uniform film on the substrate, damage to the dielectric plate occurs

In addition, when performing a process above a certain pressure or containing hydrogen, the substrate processing performance is reduced

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