Unlock instant, AI-driven research and patent intelligence for your innovation.

A method for synthesizing graphene from a solid carbon source in a two-stage process at atmospheric pressure

A solid carbon source, a technology for synthesizing graphite, applied in the direction of graphene, nano-carbon, etc., can solve the problems of unsuitability for industrial production, high energy consumption, high equipment requirements, and achieve the effect of low cost, low energy consumption and high quality

Inactive Publication Date: 2018-04-24
CHONGQING UNIV +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in most technologies that use amorphous carbon as a carbon source to synthesize graphene, the high vacuum conditions required in the reaction process require high equipment and high energy consumption, and are not suitable for large-scale industrial production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for synthesizing graphene from a solid carbon source in a two-stage process at atmospheric pressure
  • A method for synthesizing graphene from a solid carbon source in a two-stage process at atmospheric pressure
  • A method for synthesizing graphene from a solid carbon source in a two-stage process at atmospheric pressure

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0017] The present invention provides a preparation method. The present invention will be described in detail with reference to the accompanying drawings, including the following steps:

[0018] (1) Cleaning SiO 2 / Si substrate and metal substrate:

[0019] ① Put a certain size of SiO 2 The / Si substrate was placed in clean acetone and isopropanol for 5 minutes ultrasonic cleaning, rinsed with deionized water, and dried.

[0020] ②Metal base refers to copper foil. Put a certain size of copper foil into clean diluted acetic acid, acetone, isopropanol, and ultrasonically clean for 5 minutes, rinse with deionized water, and dry.

[0021] (2) Step 1) processed SiO 2 The / Si substrate is placed in a magnetron sputtering apparatus, and the magnetron sputtering technology is used to optimize the sputtering conditions and deposit a layer of cobalt film. Then, a certain thickness of amorphous carbon is sputtered on the cobalt film.

[0022] (3) SiO with metal and amorphous carbon deposited sequ...

example 1

[0026] Example 1: With the change of CVD time, compare the evolution of graphene film under different reaction times.

[0027] Follow step 1) in ① and step 2) in 1cm*1cm SiO 2 / Si substrate is deposited with metallic Co, and then amorphous carbon is deposited for 1 min; then the cobalt film and SiO of amorphous carbon will be deposited 2 / Si wafer (amorphous carbon / cobalt film / SiO 2 / Si) and the 1cm*1cm copper foil cleaned by the method in step 1) and put into the quartz tube. According to step 3), the air in the reaction chamber is exhausted. Ar and H for access 2 The numerical range of the flow rate is 300-600sccm and 30-80sccm respectively. The temperature of the front temperature zone is increased to 700℃, and the temperature of the rear temperature zone is 1050℃. At this temperature, keep the carrier gas unchanged. After the constant temperature annealing time is in the range of 30-90min, the amorphous carbon / cobalt film / SiO 2 / Si wafer is pushed into the central area of ​​t...

example 2

[0029] Example 2: Compare the influence of the amount of sputtering deposition of amorphous carbon on synthetic graphene. Figure 5 Shown are the optical micrographs and the corresponding Raman spectra of graphene synthesized under the conditions of sputtering amorphous carbon at different times.

[0030] Follow step 1) in ① and step 2) in 1cm*1cm SiO 2 / Si substrate is deposited with metal Co, and then 0.5min, 1min, and 2min of amorphous carbon are deposited respectively (as shown in Figure (5a-c)); then the cobalt film and amorphous carbon SiO 2 / Si (amorphous carbon / cobalt film / SiO 2 / Si) piece and the copper foil of 1cm*1cm cleaned according to the method in step 1) and put into the quartz tube. According to step 3), the air in the reaction chamber is exhausted. Ar and H for access 2 The numerical range of the flow rate is 300-600sccm and 30-80sccm respectively. The temperature of the front temperature zone is increased to 700℃, and the temperature of the rear temperature zo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of carbon material preparation, and belongs to the field of graphene production, in particular to a kind of solid carbon source as a precursor, through a two-stage reaction process, under normal pressure conditions, using a chemical vapor deposition (CVD) method to synthesize a single layer Graphene, and through the precise control of the supply of solid carbon sources, a new method for controlling the number of graphene layers. The method is to use a catalyst to pass a gas that can react with the solid carbon source in the first stage of the reaction process under normal pressure and relatively low temperature, and convert the solid carbon source under the action of the catalyst. It is a carbon-containing gas reaction species; in the second reaction process, the previously generated carbon-containing gas reaction species is transported through the carrier gas, and under the action of the metal catalyst, it is adsorbed on the surface of the metal catalyst, and undergoes adsorption / dissolution / diffusion / Physicochemical steps such as precipitation generate graphene on the surface of metal catalysts. Through this method, we successfully synthesized single-layer graphene, and confirmed that this method can be used to control the number of graphene layers by changing the supply of amorphous carbon sources.

Description

Technical field [0001] The present invention relates to the technical field of carbon nano material preparation, in particular to a new technology that uses a solid carbon source as a precursor to synthesize graphene by a CVD method under normal pressure through a two-stage reaction process. Background technique [0002] Graphene is a new material with a two-dimensional honeycomb structure formed by stacking a single layer of carbon atoms. Since 2004, two scientists at the University of Manchester, Dr. Novoselov and Professor Geim, have used mechanical exfoliation to successfully separate high-quality graphene that exists alone in the laboratory (Novoselov KS, et al. science, 2004, 306, 666.), It has set off a research upsurge of graphene. With the continuous deepening of research, new preparation methods have emerged one after another, mainly including micromechanical exfoliation (Novoselov KS, et al. Science, 2004, 306, 666.), redox method (Stankovich S, etal) Carbon, 2007, 45...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
Inventor 胡宝山杨倩金燕方千瑞董立春
Owner CHONGQING UNIV