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Pressure sensor and forming method thereof

A pressure sensor, pressure technology, applied in piezoelectric device/electrostrictive device, fluid pressure measurement using capacitance change, piezoelectric/electrostrictive/magnetostrictive device, etc., can solve the problem of poor performance, pressure sensor Low sensitivity, etc., to achieve accurate pressure value and prevent warpage

Active Publication Date: 2015-05-13
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The problem solved by the present invention is that the pressure sensor formed in the prior art has low sensitivity and poor performance

Method used

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  • Pressure sensor and forming method thereof

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Embodiment Construction

[0050] An analysis of existing technologies found that, with reference to Figure 4 , SiGe layer 6 has greater stress. On the one hand, the presence of a large stress will cause the SiGe layer on the cavity 7 to warp, which will change the surface area of ​​the SiGe layer opposite to the lower plate 4, so that the expected capacitance value of the capacitor will change, so the measured pressure value will not change. precise.

[0051] On the other hand, the presence of a large stress reduces the sensitivity of the SiGe layer on the cavity 7. When the external pressure acts on the SiGe layer on the cavity 7, the stress of the SiGe layer itself may offset a part of the external pressure, so that the SiGe The layer cannot deform as expected, especially, the SiGe layer may not deform when the external pressure is not large. The pressure value measured by the existing pressure sensor is inaccurate, and the performance of the pressure sensor is not good.

[0052] In view of the a...

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Abstract

The invention discloses a pressure sensor and a forming method thereof. The pressure sensor comprises a substrate, an interlayer dielectric layer, a pressure induction film and a plurality of mutually isolated blocky members, wherein a transistor is formed in the substrate; the interlayer dielectric layer is positioned on the substrate and covers the substrate and the transistor; a lower pole plate is formed in the interlayer dielectric layer; the upper surface of the lower pole plate is exposed; the lower pole plate is electrically connected with the transistor; the pressure induction film is positioned on the interlayer dielectric layer, covers the interlayer dielectric layer and is electrically connected with the transistor; a cavity is formed between the lower pole plate and the pressure induction film; the block members are positioned on the pressure induction film and are positioned on the upper side of the cavity, the upper surface of the pressure induction film is exposed. In the technical scheme, stress of the pressure induction film is released by the gravity of the multiple blocky members; the sensitivity of the pressure sensor is enhanced, and the performance is better.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a pressure sensor and a forming method thereof. Background technique [0002] A micro-electromechanical system (MEMS) is a tiny device that integrates microelectronic circuits and micromechanical brakes. It can use sensors to receive external information, convert the converted signals through circuit processing and amplify them, and then change them into mechanical operations by actuators. Execute information command. It can be said that MEMS is an integrated device that acquires, processes information and performs mechanical operations. [0003] According to the above principle, the existing MEMS pressure sensor receives the external gas pressure through the sensing membrane, and then converts it into an electrical signal to measure specific pressure information. [0004] Prior art methods of forming pressure sensors include: [0005] refer to figure 1 , providing a s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/12B81B3/00B81C1/00
Inventor 刘国安徐伟刘煊杰
Owner SEMICON MFG INT (SHANGHAI) CORP
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