Method for preparing indium oxide octahedral nanocrystal film

A technology of octahedron and nanocrystal, applied in the field of preparing indium oxide octahedral nanocrystal film

Inactive Publication Date: 2015-05-20
UNIV OF JINAN
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there is no report on the preparation of indium oxide octahedral nanocr

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing indium oxide octahedral nanocrystal film
  • Method for preparing indium oxide octahedral nanocrystal film
  • Method for preparing indium oxide octahedral nanocrystal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] InCl 3 4H 2 O is indium salt, and the glass plate is the substrate:

[0020] (1) Make a mixed solution of ethylene glycol, water, absolute ethanol, and glacial acetic acid at a volume ratio of 2:3:5:12, and then add InCl 3 4H 2 O is dissolved in it to form an indium ion concentration of 1.20 mol L -1 solution, and stirred rapidly at room temperature for 2 h;

[0021] (2) Add citric acid to the solution described in (1), stir and dissolve, and the concentration of citric acid is 0.30 mol L -1 ;

[0022] (3) Heating the solution described in (2) to 50°C, stirring at this temperature for 5 h, and cooling to obtain a sol;

[0023] (4) Put 2 drops of the sol described in (3) onto a clean 2 × 2 cm 2 On the substrate, the film was coated by spin-coating process at a speed of 3000 rpm for 40 seconds, and the obtained film was dried at 100°C for 2 h to obtain a gel film;

[0024] (5) Sintering the gel film described in (4) at 500°C to obtain an indium oxide octahedral na...

Embodiment 2

[0027] InCl 3 4H 2 O is indium salt, and the glass plate is the substrate:

[0028] (1) Make a mixed solution of ethylene glycol, water, absolute ethanol, and glacial acetic acid in a volume ratio of 3:0:5:12, and then add InCl 3 4H 2 O is dissolved in it to form an indium ion concentration of 1.00 mol L -1 solution, and stirred rapidly at room temperature for 2 h;

[0029] (2) Add citric acid to the solution described in (1), stir and dissolve, and the concentration of citric acid is 0.10 mol L -1 ;

[0030] (3) Heating the solution described in (2) to 40°C, stirring at this temperature for 3 h, and cooling to obtain a sol;

[0031] (4) Put 2 drops of the sol described in (3) onto a clean 2 × 2 cm 2 On the substrate, the film was coated by spin-coating process at a speed of 3000 rpm for 40 seconds, and the obtained film was dried at 100°C for 2 h to obtain a gel film;

[0032] (5) Sintering the gel film described in (4) at 500°C to obtain an indium oxide octahedral na...

Embodiment 3

[0035] InCl 3 4H 2 O is indium salt, and FTO conductive glass is the substrate:

[0036] (1) Make a mixed solution of ethylene glycol, water, absolute ethanol, and glacial acetic acid in a volume ratio of 2:3:5:15, and then add InCl 3 4H 2 O is dissolved in it to form an indium ion concentration of 2.20 mol L -1 solution, and stirred rapidly at room temperature for 2 h;

[0037] (2) Add citric acid to the solution described in (1), stir and dissolve, and the concentration of citric acid is 0.10 mol L -1 ;

[0038] (3) Heating the solution described in (2) to 40°C, stirring at this temperature for 3 h, and cooling to obtain a sol;

[0039](4) Put 2 drops of the sol described in (3) onto a clean 2 × 2 cm 2 On the substrate, the film was coated by spin-coating process at a speed of 3000 rpm for 40 seconds, and the obtained film was dried at 100°C for 2 h to obtain a gel film;

[0040] (5) Sintering the gel film described in (4) at 500°C to obtain an indium oxide octahedra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for preparing an indium oxide film with octahedral nanocrystal microscopic shape on a substrate, which comprises the following steps: (1) preparing a mixed solution of ethylene glycol, water, anhydrous ethanol and glacial acetic acid, dissolving inorganic indium salt in the mixed solution to form a solution with the indium ion concentration of 0.50-2.60 mol.L<->, and quickly stirring at room temperature for 2 hours; (2) adding citric acid into the solution, stirring, and dissolving, wherein the concentration of the citric acid is 0.08-0.60 mol.L<->; (3) heating the solution in the step (2) to 30-70 DEG C, stirring at such temperature for 1-8 hours, and cooling to obtain a sol; (4) dripping 1-5 drops of sol onto a clean 2*2cm<2> substrate, preparing a film by spin coating, and drying the obtained film at 100 DEG C for 2 hours to obtain a gel film; and (5) sintering the gel film in the step (4) at 450-700 DEG C to obtain the indium oxide octahedral nanocrystal film. The preparation method is based on a mild sol-gel technique, does not need any CVD (chemical vapor deposition) growth system, can directly prepare the indium oxide film with octahedral nanocrystal microscopic shape on the substrate, and has the advantages of no catalyst residue, no need of atmosphere protection, high single-time reaction yield, low cost and the like.

Description

technical field [0001] The invention relates to a method for preparing an indium oxide octahedral nanocrystalline film on a substrate, in particular to a method for preparing a gel film on a substrate by a sol-gel process using a spin coating method, and then sintering to prepare a microscopic octahedral nanocrystalline film. The invention discloses a crystallized indium oxide thin film method, which belongs to the technical field of nanometer material synthesis. The indium oxide octahedral nanocrystal film can be used in the fields of transparent electrodes, field emission, solar cells, photocatalysis, photoelectric catalysis, photodegradation, sensors and the like. Background technique [0002] Indium oxide octahedral nanocrystals (English In 2 o 3 Octahedron nanocrystals) have important applications in the fields of gas sensors, field emission, and solar energy conversion due to their special exposed crystal faces and sharp edges and corners. In recent years, for the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C03C17/23C01G15/00B82Y30/00
CPCB82Y30/00C01G15/00C01P2004/03C01P2004/64C03C17/27C03C2217/215
Inventor 陈长龙穆晓慧魏玉玲
Owner UNIV OF JINAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap