Separation method of diamond layer

Abstract

The invention discloses a separation method of a diamond layer, which comprises the following steps: carrying out two-dimensional scanning on the diamond inside to be treated by a laser, and forming a non-diamond layer a certain depth below the surface of the diamond to be treated; and removing the non-diamond layer to implement the up-down separation of the diamond layer. The method can not destroy the diamond substrate surface. Compared with the laser cutting technique, the method lowers the loss in diamond cutting. Compared with the ion implantation separation technique, the method saves the cost and shortens the processing time.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for separating a diamond layer. Background technique [0002] As a superhard tool and the substrate of electronic devices, diamond is widely used in industry. In all applications it is desirable to use large size diamond as the starting material. For polycrystalline diamond, polycrystalline substrates larger than 2 inches have been able to be synthesized and used as optical windows, superhard tools and other fields. On the other hand, single crystal diamond substrates are formed by cutting natural or synthetic diamond into pieces by laser cutting, cleavage, and the like. If necessary, polish the corresponding surface. However, we know that natural diamonds are very rare and large-sized natural diamonds are very expensive. Furthermore, although high-temperature and high-pressure synthetic diamond is widely used in various industrial fields, this met...

AI Technical Summary

Problems solved by technology

However, the high-energy ion implanter with the required energy of about 3MeV is very expensive, and the ion implantation time is also very long, so the use of ion implantation to separate diamonds is limited in industrial applications and scientific research.

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