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Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and technological method

A device, radio frequency technology, applied in the field of radio frequency LDMOS devices, can solve the problems of no optimization, uneven electric field intensity, etc., to achieve the effect of improving the shape, uniform electric field distribution, and enhanced control

Active Publication Date: 2015-05-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

The electric field intensity borne by the N-type drift region from the drain end to the gate end is uneven, and the lightly doped N-type drift region 12 in the figure is uniformly doped, and no corresponding optimization has been carried out.

Method used

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  • Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and technological method
  • Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and technological method
  • Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and technological method

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Embodiment Construction

[0031] The radio frequency LDMOS device described in the present invention, such as Figure 7 As shown, there is a P-type epitaxy 10 on the P-type substrate 1, and the P-type epitaxy 10 has a P-type body region 11, and a heavily doped P-type region 22 located in the P-type body region 11 and the radio frequency Source region 23 of the LDMOS device.

[0032] The P-type epitaxy 10 also has a lightly doped drift region, and the lightly doped drift region is a step-like distribution formed by performing ion implantation with different energies in multiple regions. It can be seen from the figure that the stepwise distributed lightly doped drift region includes a region formed by three ion implantations, the first ion implantation forms the first region 5, which is close to the polysilicon gate 15, and its ions The implantation energy is the highest, and the junction depth formed is the deepest; the second ion implantation forms the second region 6, and the ion implantation energy ...

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Abstract

The invention discloses a radio frequency LDMOS (laterally diffused metal oxide semiconductor) device. A body area and a light-doped drifting area are arranged in a P-type epitaxy on a P-type substrate, and a polycrystalline silicon grid electrode is arranged on the surface of the expitaxy. The light-doped drifting area is a stepped drifting area formed by forming different junction depths after different energy is injected according to areas for three times, and the junction depths of the light-doped drifting area are deepened toward the direction of the polycrystalline silicon grid electrode gradually, so that electric field intensity distribution of the light-doped drifting area is adjusted and optimized, output capacitance of the radio frequency LDMOS device is reduced, and breakdown voltage of the device is increased. The invention further provides a technological method of the radio frequency LDMOS device. The technological method includes the steps of three-time injection of the drifting area, forming of the body area and an original drain region, deposition of an oxidation layer, forming of a Faraday ring and the like.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a radio frequency LDMOS device, and the invention also relates to a process method of the radio frequency LDMOS device. Background technique [0002] RF LDMOS (LDMOS: Laterally Diffused Metal Oxide Semiconductor) device is a new generation of integrated solid-state microwave power semiconductor products formed by the integration of semiconductor integrated circuit technology and microwave electronic technology. It has good linearity, high gain, high withstand voltage, and output power. Large size, good thermal stability, high efficiency, good broadband matching performance, easy to integrate with MOS process, etc., and its price is much lower than that of gallium arsenide devices. It is a very competitive power device and is widely used in GSM , PCS, power amplifiers for W-CDMA base stations, as well as wireless broadcasting and nuclear magnetic resonance. [0003] In the design pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L21/265
CPCH01L21/265H01L29/06H01L29/66681H01L29/7816
Inventor 慈朋亮石晶胡君李娟娟钱文生刘冬华
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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