Preparation method of ZnO-CuInS2 heterogeneous core-shell structure nanorod array

Abstract

The invention relates to a preparation method of a ZnO-CuInS2 heterogeneous core-shell structure nanorod array. The preparation method comprises the following steps: immersing a cleaned FTO glass substrate in a zinc acetate ethanol solution to prepare a base covered with a ZnO seed layer, and putting in a reaction kettle; transferring a mixed solution, obtained by dissolving zinc nitrate, hexamethylenetetramine and polyethyleneimine in water, in the reaction kettle so that the base covered with the ZnO seed layer is immersed, heating, preserving heat, and taking out for annealing treatment to obtain the base grown with a ZnO nanorod array; extracting the base grown with the ZnO nanorod array in a cationic precursor solution (obtained by mixing a copper chloride complexing solution and an indium chloride complexing solution) and an anionic precursor solution (water solution of thiourea with NaOH solution adjusted pH) in sequence, thus obtaining the ZnO-CuInS2 heterogeneous core-shell structure nanorod array. The method is low in cost and simple in technology, and the obtained nanorod array is stable in structure, good in quality and high in photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to a method for preparing a solar semiconductor thin film, in particular to ZnO-CuInS 2 Preparation method of heterogeneous core-shell structure nanorod array. Background technique [0002] The energy crisis and environmental pollution have promoted the development of solar cells. The photoelectric conversion semiconductor film materials used in the absorbing layer and window layer in solar cells are the most important materials in solar cells. The absorbing layer absorbs light energy to generate electrons and holes (photo-generated load carrier), the photogenerated carrier generated by the absorbing layer is transferred to the electrode through the window layer. [0003] At present, an ideal material for preparing the absorber layer of solar cells is CuInS 2 . First, CuInS 2 The bandgap width of photoelectric semiconductor film is 1.5eV, which is close to the optimal bandgap width (l.45ev) of solar cells, and its bandgap widt...

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Problems solved by technology

The defect of this method is: the cation precursor solution in the preparation process is added with hydrochloric acid, which is strongly acidic, and the sulfide ion in the anion precursor solution is hydrolyzed, which is also acidic; , will be severely corroded, which will damage the ZnO nanorods and reduce their electron transport properties; resulting in lower quality and poor reliability of the final solar cell, and the photoelectric conversion efficiency cannot be guaranteed (ACS Nano 2010, 4, 3302-3308 )

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