Organic light-emitting device and preparation method thereof
An electroluminescent device and electroluminescent technology, which are applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problems of high driving voltage, low carrier mobility, poor stability, etc.
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Embodiment 1
[0037] A method for preparing an organic electroluminescent device, comprising the following steps:
[0038] (1) Conductive anode 1 is made of indium tin oxide glass (ITO), and ultrasonicated with detergent, deionized water, acetone and ethanol for 5 minutes each to remove organic pollutants on the glass surface, cleaned and air-dried; The final ITO glass also needs surface activation treatment to increase the oxygen content on the ITO surface and improve the work function on the ITO surface; the thickness of the conductive anode 1 is 100nm;
[0039] (2) Then, the first doped layer 21, the second doped layer 22, the third doped layer 23, the fourth doped layer 24 and the fifth doped layer 25 are prepared by vacuum evaporation on the conductive anode 1 in sequence to obtain The hole injection layer 2 with a thickness of 30nm, the materials of the first doped layer 21, the second doped layer 22, the third doped layer 23, the fourth doped layer 24 and the fifth doped layer 25 are...
Embodiment 2
[0048] A method for preparing an organic electroluminescent device, comprising the following steps:
[0049] (1) Use indium tin oxide glass (ITO) as the conductive anode, and use detergent, deionized water, acetone and ethanol to ultrasonicate for 5 minutes each to remove organic pollutants on the glass surface, clean it and air dry it; The ITO glass also needs surface activation treatment to increase the oxygen content on the ITO surface and improve the work function of the ITO surface; the thickness of the conductive anode is 100nm;
[0050] (2) Then prepare the first doped layer, the second doped layer, the third doped layer, the fourth doped layer and the fifth doped layer by vacuum evaporation on the conductive anode to obtain holes with a thickness of 25nm The injection layer, the material of the first doped layer, the second doped layer, the third doped layer, the fourth doped layer and the fifth doped layer are all WO 3 Doped to the mixed material formed by TCTA, the ...
Embodiment 3
[0059] A method for preparing an organic electroluminescent device, comprising the following steps:
[0060] (1) Use indium tin oxide glass (ITO) as the conductive anode, and use detergent, deionized water, acetone and ethanol to ultrasonicate for 5 minutes each to remove organic pollutants on the glass surface, clean it and air dry it; The ITO glass also needs surface activation treatment to increase the oxygen content on the ITO surface and improve the work function of the ITO surface; the thickness of the conductive anode is 100nm;
[0061] (2) Then prepare the first doped layer, the second doped layer, the third doped layer, the fourth doped layer and the fifth doped layer by vacuum evaporation on the conductive anode to obtain holes with a thickness of 25nm Injection layer, the material of the first doped layer, the second doped layer, the third doped layer, the fourth doped layer and the fifth doped layer is V 2 o 5 The mixed material formed by doping to CBP has the sa...
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Abstract
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