A method for stable doping to reduce the sheet resistance of graphene films

A technology of graphene film and square resistance, which is applied in the direction of resistors, resistance manufacturing, circuits, etc., can solve the problems of rising square resistance, affecting the quality of graphene, limiting the application of graphene film, etc., to reduce square resistance and facilitate patterns Chemical treatment, promote the effect of wide application

Active Publication Date: 2018-02-16
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI +1
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  • Application Information

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Problems solved by technology

[0003] At present, the preparation methods of graphene film mainly include mechanical exfoliation method, silicon carbide epitaxial growth method, redox method and chemical vapor deposition method. The square resistance can be reduced by certain doping methods. However, although the existing doping methods can reduce the square resistance, the stability is poor. After a period of time at room temperature, the square resistance will increase significantly, thus affecting graphene quality, which limits the application of graphene films

Method used

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  • A method for stable doping to reduce the sheet resistance of graphene films
  • A method for stable doping to reduce the sheet resistance of graphene films
  • A method for stable doping to reduce the sheet resistance of graphene films

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Experimental program
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Effect test

Embodiment 1

[0025] Prepare the doping reagent into a 0.01-1mol / L ethanol solution, soak the graphene film transferred on the substrate into the solution for 80 minutes, take it out and soak it in clean water for 1 minute, and dry it with high-purity nitrogen. Then heated at 80°C for 60min. The square resistance of graphene dropped from 520Ω / □ to 170-220Ω / □. Available doping reagent structures are as follows:

[0026]

[0027]

Embodiment 2

[0029] Prepare the doping reagent into a 0.01-1mol / L carbon disulfide solution, soak the graphene film transferred on the substrate into the solution for 20 minutes, take it out and soak it in a solvent for 240 minutes, and dry it with high-purity nitrogen. It was then heated at 8 °C for 240 min. The square resistance of graphene dropped from 550Ω / □ to 190-254Ω / □. Available doping reagent structures are as follows:

[0030]

Embodiment 3

[0032] The doping reagent is prepared into a solution of 0.01-1 mol / L, dropped on the graphene film and left for 20 minutes, and the graphene film is soaked in a solvent (including aqueous solution, ethanol solution, isopropanol, etc.) for 30 minutes. The square resistance of graphene dropped from 515Ω / □ to 225-245Ω / □.

[0033] Available doping reagent structures are as follows:

[0034]

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Abstract

The invention relates to a method for stabilizing doping to reduce the square resistance of a graphene film, which is characterized in that it comprises the following steps: the graphene film transferred on the substrate is in contact with a reagent containing a stable dopant composition, and the contact time is 1 to 240 minutes to achieve stable doping of the graphene film and reduce the sheet resistance of the graphene film. After the graphene film is treated by the present invention, it can not only reduce the square resistance of the graphene film without affecting the light transmittance of the graphene film, but more importantly, the square resistance of the graphene film can be kept stable for a long time, and Baking at a high temperature of 80-120 degrees Celsius for 60-240 minutes and long-term storage, the square resistance does not change much, which facilitates subsequent patterning and other treatments, and promotes the square resistance and light transmittance of graphene films on transparent conductive films in display technology. It is widely used in demanding industrial fields.

Description

technical field [0001] The invention relates to a method for stably doping to reduce the sheet resistance of a graphene film, in particular to a method for improving the electrical properties of a graphene film, and belongs to the field of graphene film processing methods. Background technique [0002] graphene is sp 2 A two-dimensional material in which hybridized carbon atoms are arranged in a hexagonal lattice. The unique two-dimensional crystal structure endows graphene with unique properties. The thickness of single-layer graphene is 0.34nm, the light absorption is only 2.3% in a wide band, and the intrinsic carrier mobility is as high as 2.0×10 5 cm 2 ·V -1 ·s -1 , which makes graphene essentially have high transmittance and good conductivity at the same time, and can be used as a transparent conductive material. [0003] At present, the preparation methods of graphene film mainly include mechanical exfoliation method, silicon carbide epitaxial growth method, red...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C17/075
Inventor 黄德萍姜浩朱鹏李占成张永娜高翾史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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