Low-power-consumption ultra-wide-band low-noise amplifier

A low-noise amplifier and ultra-wideband technology, which is applied in the direction of improving the amplifier to expand the bandwidth, etc., can solve the problems of narrow bandwidth and high power consumption, and achieve the effects of enhancing stability, reducing power consumption, and simple circuit structure

Inactive Publication Date: 2015-05-27
BEIJING UNIV OF TECH
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Problems solved by technology

[0006] In view of the deficiencies in the above problems, the present invention provides a low-power ultra-bandwidth low-noise amplifier, which can achieve coverage in the 2-5GHz frequency range, to solve the problem of traditional low-noise amplifiers with narrow bandwidth and high power consumption. The problem

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Embodiment Construction

[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0019] like figure 1 As shown, the amplifier of the present invention is composed of a common-source input amplification stage, a transconductance enhancement stage and an output buffer stage. Therefore, the common-source input amplification stage, the transconductance enhancement stage and the output buffer stage constitute a multi-stage current multiplexing structure, which can reduce the power consumption of the low noise amplifier. The transconductance enhanced load uses parallel peaking inductor L3 and resistor R6 to provide a zero point for the circuit system, which enhances the stability of the circuit system and expands its bandwidth.

[0020] like figure 2 As shown, a low-power ultra-wideband low-noise amplifier, the low-power ultra-wideband low-noise ...

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Abstract

The invention provides a low-power-consumption ultra-wide-band low-noise amplifier, and relates to the technical field of a radio frequency integration circuit. A common source input amplification stage formed by a first MOS (metal oxide semiconductor) tube (M1) is adopted, the transconductance of a second MOS tube (M2) can be enhanced, when the input matching and the noise matching are realized, and the high gain is realized; a load of the second MOS tube (M2) adopts a parallel peak inductor L3 and a resistor R6, a zero point is provided for a circuit system, the stability of the circuit system is enhanced, and the bandwidth of the circuit system is expanded; the first MOS tube (M1), the second MOS tube (M2), a third MOS tube (M3) and a fourth MOS tube (M4) form a multi-stage current multiplexing structure, and low power consumption is realized. The invention provides a low-power-consumption ultra-wide-band low-noise amplifier working in a frequency range being 2 to 5 GHz.

Description

Technical field: [0001] The invention relates to the technical field of radio frequency integrated circuits, in particular to the field of low-power ultra-bandwidth low-noise amplifiers. Background technique: [0002] With the development of short-distance wireless communication, people have higher and higher requirements for the performance of high-speed wireless communication system. Larger capacity, faster speed and safer communication are the inevitable development trend of short-distance wireless communication. The wireless communication system is inseparable from the receiver. The front-end radio frequency module in the receiver is a low-noise amplifier (LNA), which has an important impact on the entire receiver and the entire communication system. [0003] In order to meet the requirements of high-speed transmission, LNA is required to work in a wide frequency range, but the current low-noise amplifier has the problem of narrow frequency band, which cannot meet this r...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/42
Inventor 张万荣陈鹏辉金冬月谢红云赵飞义邓蔷薇
Owner BEIJING UNIV OF TECH
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