Inductive coil group and inductive coupling plasma processing device

Abstract

The invention discloses a plasma processing device. The plasma processing device comprises an air-tight reaction chamber, wherein the reaction chamber comprises a reaction chamber sidewall and a top insulating material window, and the reaction chamber therein comprises a base for supporting a substrate to be processed; a self-shielding inductive coil group is fixedly arranged above the insulating material window. The plasma processing device is characterized in that the self-shielding inductive coil group comprises a plurality of inductive coils, each inductive coil comprises a flat-plate-shaped intermediate coil, a plurality of intermediate coils are combined to form a shielding ring, the two ends of each intermediate coil respectively comprise an input coil and an output coil, wherein the input coil and the output coil are spirally upward from the two ends of the intermediate coil and are respectively connected to a radio-frequency power supply and a regulating circuit, and downward projections of the input coil and the output coil are located on at least one intermediate coil. By adopting the inductive coil structure disclosed by the invention, the capacity coupling of the inductive coil towards the inside of the reaction chamber can be reduced and the service life of the insulating material window can be improved.

Description

technical field [0001] The invention relates to plasma processing equipment, in particular to an inductive coupling coil of a plasma processing device. Background technique [0002] In recent years, with the development of semiconductor manufacturing processes, the requirements for the integration and performance of components are getting higher and higher, and plasma technology (Plasma Technology) has been widely used. Plasma technology introduces a reactive gas and electron flow into the reaction chamber of the plasma processing device, uses a radio frequency electric field to accelerate the electrons, and collides with the reactive gas to ionize the reactive gas and generate plasma. The generated plasma can be used Used in various semiconductor manufacturing processes, such as deposition processes (such as chemical vapor deposition), etching processes (such as dry etching), etc. [0003] Plasma processing equipment includes common capacitively coupled and inductively cou...

AI Technical Summary

Problems solved by technology

[0004] However, such a reaction chamber structure will also bring serious problems: due to the existence of the Faraday shielding plate, the electric field generated on the induction coil cannot enter the reaction chamber, and only part of the magnetic field can enter, which will cause the plasma to be unable to be reliably ignited when the plasma is ignited. Additional devices or higher power input RF coils are required to ensure plasma ignition

The impedance of the plasma will change sharply before and after ignition, from a high-impedance substance to a conductor in an instant, and the matching device that adjusts the input RF power needs a mechanical structure to adjust the impedance matching, which can only reach the second level, so the response speed of the matching device It is far from the impedance change at the instant of ignition, so the extra power applied to ignite the plasma will be erroneously applied to the reaction chamber for a period of time, during which the excessive power will damage the components or wafers inside and outside the reaction chamber. adversely affect

At the same time, due to the existence of the Faraday shielding plate, only part of the radio frequency magnetic field can enter the reaction chamber to excite the reaction gas to form plasma, and part of the radio frequency energy is wasted, which greatly reduces the use efficiency of electric energy

Images