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A kind of preparation method of metallic graphene

A graphene and metallic technology, applied in the field of preparation of metallic graphene, can solve problems such as unfavorable applications

Inactive Publication Date: 2016-08-17
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the current preparation of graphene, the resistance increases with the drop of temperature, and the resistance of graphene increases to a larger value at low temperature, which is a typical semiconductor behavior [3], which is not conducive to the application under low temperature conditions

Method used

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  • A kind of preparation method of metallic graphene
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  • A kind of preparation method of metallic graphene

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preparation example Construction

[0031] The preparation method of metallic graphene provided by the invention, the method comprises the steps:

[0032] Step a. Put the clean copper sheet into the chemical vapor deposition furnace that has been vacuumed, and feed the hydrogen gas with a flow rate of 40 standard milliliters per minute. After the chemical vapor deposition furnace is heated up to 1000 degrees Celsius, the flow rate is 60 Standard milliliters of methane gas per minute, shut off the methane gas after 15 minutes, cool down the chemical vapor deposition furnace to room temperature, take out the copper sheet, spin-coat polymethyl methacrylate on the copper sheet on the side that contacts the methane gas, and then Put the copper sheet into the ferric chloride solution, and after 30 minutes, use a clean silicon chip to remove the film suspended on the ferric chloride solution, and wash the film on the silicon chip with acetone to obtain Graphene on a sheet;

[0033]Step b. Metals such as gold, copper, ...

Embodiment 1

[0038] Put the clean copper sheet into the chemical vapor deposition furnace that has been vacuumed, and feed the hydrogen gas with a flow rate of 40 standard milliliters per minute. After the chemical vapor deposition furnace is heated up to 1000 degrees Celsius, the flow rate is 60 standard milliliters per minute. Minutes of methane gas, after 15 minutes, turn off the methane gas, cool down the chemical vapor deposition furnace to room temperature, take out the copper sheet, spin-coat polymethyl methacrylate on the copper sheet that is in contact with the methane gas, and then apply the copper After 30 minutes, the thin film suspended on the ferric chloride solution was taken out with a clean silicon wafer, and the thin film on the silicon wafer was washed with acetone to obtain the growth on the silicon wafer. Graphene; then 4 nanometers of gold are deposited on the graphene obtained by magnetron sputtering, and finally the graphene obtained by depositing 4 nanometers of gol...

Embodiment 2

[0040] Put the clean copper sheet into the chemical vapor deposition furnace that has been vacuumed, and feed the hydrogen gas with a flow rate of 40 standard milliliters per minute. After the chemical vapor deposition furnace is heated up to 1000 degrees Celsius, the flow rate is 60 standard milliliters per minute. Minutes of methane gas, after 15 minutes, turn off the methane gas, cool down the chemical vapor deposition furnace to room temperature, take out the copper sheet, spin-coat polymethyl methacrylate on the copper sheet that is in contact with the methane gas, and then apply the copper After 30 minutes, the thin film suspended on the ferric chloride solution was taken out with a clean silicon wafer, and the thin film on the silicon wafer was washed with acetone to obtain the growth on the silicon wafer. Graphene; then 4 nanometers of copper are deposited on the graphene obtained by magnetron sputtering, and finally the graphene obtained by depositing 4 nanometers of c...

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Abstract

The invention discloses a preparation method of metallic graphene. The method comprises the following steps: a, placing a clean copper sheet into a chemical vapor deposition furnace always vacuumizing, to obtain graphene; b, depositing gold, copper, aluminum, titanium and other metals on the graphene obtained in the step a; c, placing the graphene deposited with 1-5nm of metal obtained from the step b into a vacuum annealing furnace, annealing at the temperature of 100-500DEG C, maintaining the annealing within 24h, cooling a vacuum annealing furnace to room temperature, and taking out the graphene deposited with 1-5nm of metal, namely metallic graphene. The metallic graphene not only maintains the characteristics of single-layer graphene, but also shows metallicity.

Description

technical field [0001] The invention relates to a method for preparing metallic graphene, in particular to a method for preparing metallic graphene. Background technique [0002] In 2004, two scientists from the University of Manchester, Andre Jem and Kostya Novoselov, peeled off graphite flakes from graphite. They stuck the two sides of the graphite flakes on a special adhesive tape, and tore off The graphite sheet can be divided into two by removing the tape. They kept repeating this operation to peel off the graphite flakes thinner and thinner. In this way, they obtained graphite flakes composed of only one layer of carbon atoms, which is graphene [1]. The high mobility [2] and light transmittance of graphene make graphene have many potential applications. [0003] However, in the current preparation of graphene, the resistance increases with the decrease of temperature, and the resistance of graphene increases to a larger value at low temperature, which is a typical se...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04
Inventor 施智祥李雄
Owner SOUTHEAST UNIV
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