Semiconductor device and method of forming the same

Abstract

A semiconductor device and its forming method, wherein the forming method of the semiconductor device includes: providing a semiconductor substrate and a dummy gate structure; etching the semiconductor substrate on both sides of the dummy gate structure to form a first groove; The first stress layer of the first groove; etching and removing the dummy gate structure and a partial thickness of the semiconductor substrate, forming a second groove in the semiconductor substrate; forming a second stress layer filling the second groove, the second The stress type of the second stress layer is opposite to that of the first stress layer, and the top of the second stress layer is lower than the surface of the semiconductor substrate; an intrinsic material layer filling the second groove is formed, and the intrinsic material layer is located on the surface of the second stress layer; A gate structure is formed on the surface of the intrinsic material layer, and the gate structure includes a gate dielectric layer and a gate conductive layer. The invention improves the carrier mobility in the channel region of the semiconductor device, optimizes the operating speed of the semiconductor device, and improves the electrical performance of the semiconductor device.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing technology, in particular to semiconductor devices and methods of forming the same. Background technique [0002] With the continuous development of semiconductor technology, carrier mobility enhancement technology has been widely studied and applied. Increasing the carrier mobility in the channel region can increase the driving current of the semiconductor device and improve the performance of the device. [0003] In the existing semiconductor device manufacturing process, since stress can change the energy gap and carrier mobility of silicon materials, improving the performance of semiconductor devices through stress has become an increasingly common method. Specifically, by appropriately controlling the stress, the mobility of carriers (electrons in NMOS devices, holes in PMOS devices) can be increased, thereby increasing the driving current, thereby greatly improving the performance...

AI Technical Summary

Problems solved by technology

[0005] However, in practical applications, it has been found that the degree of improvement in carrier mobility of semiconductor devices formed by existing technologies is limited, which is not enough to meet the needs of increasing the operating speed of semiconductor devices, and there are problems such as lowering of the drain induction barrier and leakage current.

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