A trench isolated lateral insulated gate bipolar transistor

Abstract

A trench-isolated lateral insulated gate bipolar transistor, comprising: a P-type substrate, on which a buried oxide layer is arranged, an N-type drift region is arranged on the buried oxide layer, and an N-type drift region is arranged below the upper surface of the N-type drift region. There is a P-type body region and an N-type buffer layer, and a P-type collector region is arranged in the N-type buffer layer. It is characterized in that a trench isolation layer is arranged in the N-type drift region, and the upper surface of the N-type drift region is connected to the The two corners formed by the trench isolation layer are respectively provided with a first P-type emitter region and a second P-type emitter region, and a metal electrode is connected to the first P-type emitter region and the second P-type emitter region , a third P-type emitter region is also provided below the upper surface of the N-type drift region, and a second emitter aluminum electrode is connected to the third P-type emitter region, and the second P-type emitter region and the third A second gate oxide layer is provided on the upper surface of the N-type drift region between the P-type emitter regions, a silicon nitride layer is provided on the second gate oxide layer, and a second polysilicon layer is provided above the silicon nitride layer. grid.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, specifically, a trench-isolated lateral insulated gate bipolar transistor, which is especially suitable for high-power integrated circuits such as frequency conversion speed regulation, high-voltage power transmission, electric traction, frequency conversion household appliances, semi-conductors, etc. Bridge drive circuits and automotive production and other fields. Background technique [0002] Insulated gate bipolar transistor IGBT is a composite power device evolved from the combination of MOS gate device structure and bipolar transistor structure. It has the characteristics of both MOS transistor and bipolar transistor, and has good switching speed and conduction. Small voltage drop, easy to drive and other characteristics, widely used in power electronic circuits. However, when the IGBT is turned off, there will be a tail current, which greatly increases the turn-...

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Problems solved by technology

However, the N-type carrier storage layer introduced by this structure will increase the concentration of the N-type drift region around the P-type body region, which will cause a sharp drop in the breakdown voltage of the device while improving the forward saturation voltage drop. Problems such as loss enhancement that seriously affect the working performance of the device

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