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thin film transistor

A thin film transistor and protective film technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as characteristic degradation, and achieve the effect of excellent TFT characteristics

Active Publication Date: 2017-09-29
SAMSUNG DISPLAY CO LTD
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Problems solved by technology

Therefore, even if the surface roughness of the semiconductor layer after high-temperature firing is reduced as in the above-mentioned Patent Document 3, the above-mentioned reaction occurs in the subsequent step of forming the protective film to generate protrusions on the surface of the oxide semiconductor layer. As a result, there are problems such as the formation of carrier traps and the deterioration of TFT characteristics.

Method used

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Embodiment

[0068] Hereinafter, the present invention will be described in more detail by citing the examples, but the present invention is not limited to the following examples, and can be appropriately modified and implemented within the scope of being able to adapt to the gist of the foregoing and the following. included in the technical scope of the present invention.

[0069] First, a Mo thin film (film thickness 100 nm) was formed on a glass substrate (EAGLE XG manufactured by Corning, diameter 100 mm×thickness 0.7 mm) as a gate electrode thin film, and patterned by a known method to obtain a gate electrode. The Mo thin film uses a pure Mo sputtering target, and is carried out by DC sputtering method under the conditions of film forming temperature: room temperature, film forming power: 300W, carrier gas: Ar, pressure: 2mTorr.

[0070] Next, as a gate insulating film, SiO 2 Film (200nm) was formed. The gate insulating film is formed by plasma CVD method in a carrier gas: SiH 4 an...

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Abstract

Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.

Description

technical field [0001] The present invention relates to thin film transistors (TFTs) used in display devices such as liquid crystal displays and organic EL displays. Background technique [0002] Compared with general-purpose amorphous silicon (a-Si), amorphous (amorphous) oxide semiconductors have higher carrier mobility, larger optical bandgap, and can be formed at low temperature. Therefore, they are expected to meet the requirements of large-scale , high-resolution, high-speed drive next-generation displays or resin substrates with low heat resistance, etc. [0003] Among the above-mentioned oxide semiconductors, semiconductors including amorphous oxide (In-Ga-Zn-O, hereinafter sometimes referred to as "IGZO") composed of indium, gallium, zinc, and oxygen, including indium, zinc, tin , and an amorphous oxide (In-Zn-Sn-O, hereinafter sometimes referred to as "IZTO") composed of oxygen is preferably used because it has very high carrier mobility. For example, Non-Patent ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/7869H01L29/78606H01L29/78693
Inventor 田尾博昭前田刚彰三木绫钉宫敏洋安秉斗具素英金建熙
Owner SAMSUNG DISPLAY CO LTD
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