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Cavity type film bulk acoustic resonator and its preparation method

A thin-film bulk acoustic wave and resonator technology, applied in impedance networks, electrical components, etc., can solve problems such as adverse effects of resonant structures, and achieve the effects of overcoming adverse effects, simplifying production processes, and reducing equipment costs

Active Publication Date: 2018-11-09
广州市艾佛光通科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] Based on this, the purpose of the present invention is to overcome the defects of the prior art, and to provide a method for preparing a cavity-type thin-film bulk acoustic resonator. Using this method, in the preparation process, no sacrificial layer is used and the sacrificial layer is released from the Window release, which overcomes the problem of adverse effects on the resonant structure during sacrificial layer removal

Method used

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  • Cavity type film bulk acoustic resonator and its preparation method
  • Cavity type film bulk acoustic resonator and its preparation method
  • Cavity type film bulk acoustic resonator and its preparation method

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Embodiment 1

[0055] A cavity-type film bulk acoustic resonator prepared by the following preparation method:

[0056] 1. A thin film structure layer is grown on the prepared substrate.

[0057] 1. Deposit a (0002) oriented single crystal aluminum nitride layer on the surface of the prepared substrate 6 made of silicon that has been cleaned and dried by standard RCA as the piezoelectric film 4. The thickness of the aluminum nitride layer depends on the actual application The frequency range of the decision, such as image 3 shown.

[0058] Among them, the piezoelectric film 4 of the single crystal aluminum nitride layer can be used at a trimethylaluminum (TMA) flow rate of about 50 sccm (ml / min in standard state), NH 3 The flow rate is about 3slm (standard state liter / min), the Ar flow rate is about 1slm, the substrate temperature is about 950°C, and the total pressure of the reaction chamber is about 40Tor. deposition) obtained by deposition.

[0059] 2. Using a radio frequency magnetr...

Embodiment 2

[0072] A cavity-type film bulk acoustic resonator prepared by the following preparation method:

[0073] 1. A thin film structure layer is grown on the prepared substrate.

[0074] 1. On the surface of the prepared substrate 6 made of silicon that has been cleaned and dried by standard RCA, use a radio frequency magnetron sputtering system to sputter on the surface of a single crystal aluminum nitride layer with a ZrN target (purity 99.995%) A layer of ZrN (zirconium nitride) is deposited as the top electrode 5 with a thickness of 100-300 nm.

[0075] 2. An aluminum nitride layer is deposited on the top electrode as the piezoelectric film 4, and the thickness of the aluminum nitride layer is determined according to the frequency range of the actual application. The aluminum nitride layer can be controlled at a TMA flow rate of 45 sccm (standard state ml / min), NH 3 The flow rate is about 2.5slm (standard state liter / min), the Ar flow rate is about 1slm, the substrate temperat...

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Abstract

The invention discloses a cavity film bulk acoustic resonator and a preparation method thereof, belonging to the technical field of acoustic resonators. The preparation method comprises the steps of growing a film structure layer in the acoustic resonator on a preparation substrate; fixing both the preparation substrate and the film structure layer growing on the preparation substrate on a support substrate through one side of the film structure layer so as to form a cavity between the support substrate and the film structure layer; and stripping the film structure layer off the preparation substrate. The film structure layer comprises a support layer, or comprises a support layer and a bottom electrode, or comprises a support layer, a bottom electrode and a piezoelectric film, or comprises a support layer, a bottom electrode, a piezoelectric film and a top electrode, so as to form a structure comprising the support substrate, the support layer, the bottom electrode, the piezoelectric film and the top electrode that are sequentially overlaid. Bad effects on a resonance structure in removing of a sacrificial layer in the conventional process are eliminated, so that the cavity film bulk acoustic resonator prepared by the method has better performances.

Description

technical field [0001] The invention relates to an acoustic wave resonator, in particular to a cavity type film bulk acoustic wave resonator and a preparation method thereof. Background technique [0002] The multi-functional development of wireless communication terminals has put forward high technical requirements for radio frequency devices such as miniaturization, high frequency, high performance, low power consumption, and low cost. The traditional surface acoustic wave filter (SAW) has a large insertion loss in the high frequency band above 2.4GHz, and the dielectric filter has good performance but is too bulky. Film Bulk Acoustic Resonator (FBAR) technology is a new radio frequency device technology that has emerged in recent years with the improvement of processing technology and the rapid development of modern wireless communication technology, especially personal wireless communication technology. It has a very high quality factor Q value (above 1000) and can be i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/17H03H3/02
Inventor 李国强刘国荣
Owner 广州市艾佛光通科技有限公司
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