Method of forming semiconductor device

Abstract

The invention provides a method for forming a semiconductor device. The method comprises the steps of forming a groove in a dielectric layer on a semiconductor substrate, removing the metal layer on a hard mask layer after forming metal layers on the groove and the hard mask layer on the dielectric layer, and using the chemical mechanical polishing process with the use of alkaline slurry to remove the hard mask layer and a part of metal layer until the surface of the metal layer in the groove is level with the surface of the dielectric layer. According to the above technical scheme, the removal efficiency of the hard mask layer can be effectively raised by using alkaline polishing slurry, after the hard mask layer is removed, the residual amount of hard mask residual particles of the dielectric layer and the metal layer surface is effectively reduced, thus the caused electrical conduction formed among metal plugs based on the hard mask layer residual particles in the process of switching on and using semiconductor device is avoided, and a metal bridge phenomenon among the metal plugs is effectively inhibited.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a semiconductor device. Background technique [0002] With the development of integrated circuit manufacturing technology, the feature size of integrated circuits is also continuously reduced, and the integration degree of integrated circuits is continuously increased. For example, VLSI (Very Large Scale Integration, VLSI) requires the integration of tens of thousands to millions of components on a silicon chip with an area of ​​a few millimeters. [0003] In order to improve the integration of integrated circuits, refer to figure 1 As shown, the existing semiconductor device includes a multi-layer dielectric layer structure, and each component of the semiconductor device is distributed in each layer of dielectric layer, and each component in the same dielectric layer is electrically connected by metal interconnection line 12, while different dielectr...

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Problems solved by technology

[0005] However, in actual operation, there will be a leakage phenomenon (metal bridge) between the metal plugs in the semiconductor device containing metal plugs formed by the above process, which directly reduces the performance of the semiconductor device.

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