Copper indium gallium selenium thin film solar cell with quantum well structure and manufacturing method thereof
A solar cell, copper indium gallium selenide technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve matching problems, achieve the effects of avoiding abnormal growth, uniform grain size, and improving efficiency
Active Publication Date: 2016-09-28
湖南共创光伏科技有限公司
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Problems solved by technology
[0014] The technical problem to be solved by the present invention is, aiming at the problems existing in the prior art in the matching of thin-film materials and solar spectrum energy gaps, the defects generated during the formation and growth of crystal grains, and how to fully absorb sunlight and improve the photoelectric conversion efficiency, propose Copper indium gallium selenium thin film solar cell with quantum well structure and manufacturing method thereof
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Embodiment Construction
[0038] Below in conjunction with embodiment the present invention will be further described.
[0039] Such as figure 1 with figure 2 As shown, the typical structure of copper indium gallium selenide (CIGS) solar cells is a multilayer film structure, starting from the light incident surface, including: front glass / encapsulation material / TCO front electrode / buffer layer (CdS) / light absorption layer (CIGS) / back electrode layer (Mo) / substrate;
[0040] The CIGS absorption layer in the pn junction of the copper indium gallium selenide thin film solar cell includes a quantum well structure formed by multiple periods, one of which includes two upper and lower layers with the same crystal structure but different energy gaps, and the upper layer is a high energy gap layer , the lower layer is a low energy gap layer; the high energy gap layer is doped or non-doped Cu with an energy gap between 1-1.65eV y (In 1-x Ga x ) Se 2 layer, the low energy gap layer is doped or non-doped Cu...
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The invention discloses a copper indium gallium selenide film solar cell with quantum well structure and a manufacturing method thereof. The cell comprises a PN junction formed by a CIGS absorbing layer and a CdS buffer layer. The CIGS absorbing layer comprises a quantum well structure formed by a plurality of cycles. The quantum well can separate and capture the free electrons, under the excitation of sunlight, large current is formed and the efficiency of the film solar cell is improved. According to the quantum well structure, the abnormal growth of grains and the formation of pores and cracks are avoided, a dense high-quality film with uniform grain size and matched energy gap is formed, and at the same time, the full absorption of the sunlight is facilitated according to the quantum well structure. Therefore, the efficiency of the copper indium gallium selenide film solar cell is improved further.
Description
technical field [0001] The invention relates to a solar cell, a thin film solar cell with a quantum well structure and a manufacturing method thereof, in particular to a copper indium gallium selenium thin film solar cell structure with a quantum well structure and a manufacturing method thereof. Background technique [0002] Since the French scientist AE. Becquerel discovered the photoelectric conversion phenomenon in 1839, the first solar cell based on semiconductor selenium was born in 1883. Russell obtained the first solar cell patent (US.2,402,662) in 1946, and its photoelectric conversion efficiency was only 1%. It was not until 1954 that Bell Laboratories' research discovered that doped silicon-based materials have high photoelectric conversion efficiency. This research laid the foundation for the modern solar cell industry. In 1958, the Haffman Power Company of the United States installed the first solar panel on a satellite in the United States, and its photoelect...
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IPC IPC(8): H01L31/0749H01L31/0352H01L31/18
CPCH01L31/0352H01L31/035209H01L31/0749H01L31/18Y02E10/541Y02P70/50
Inventor 李廷凯李晴风钟真
Owner 湖南共创光伏科技有限公司