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Single granule layer nanometer diamond film with strong Si-V luminescence, and production method thereof

A nano-diamond and single-particle technology, applied in nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve problems that do not involve single-particle layer nanodiamond films, and achieve Si-V luminescence performance Unstable, simple solution, and the effect of improving Si-V luminous intensity

Active Publication Date: 2015-08-12
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The current literature does not involve the preparation of single particle layer nano-diamond film

Method used

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  • Single granule layer nanometer diamond film with strong Si-V luminescence, and production method thereof
  • Single granule layer nanometer diamond film with strong Si-V luminescence, and production method thereof
  • Single granule layer nanometer diamond film with strong Si-V luminescence, and production method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Polish the monocrystalline silicon wafer with nano-scale diamond powder, and the grinding time is about half an hour. Polished silicon wafers were ultrasonically cleaned with deionized water and acetone in turn, dried, and used as substrates for the growth of nano-diamond films. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD 001) was used, acetone was used as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. The flow ratio to acetone is 200:90, the reaction power is 2200W, the distance between the hot wire and the substrate silicon wafer is 7mm, and the working pressure is 1.63Kpa; no bias is applied during the reaction, and the preparation time is 15 minutes; after the growth , the temperature of the sample is cooled under the condition of no hydrogen, and a single particle layer nano-diamond film with a thickness of...

Embodiment 2

[0037] The monocrystalline silicon wafer is polished with nanometer diamond powder, and the polishing time is about half an hour. The polished silicon wafers were washed with deionized water and acetone in an ultrasonic machine, dried, and used as substrates for the growth of nano-diamond films. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD 001) was used, acetone was used as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. The flow ratio with acetone is 200:90, the reaction power is 2200W, the distance between the hot wire and the substrate silicon wafer is 7mm, the working pressure is 1.63Kpa; no bias is applied during the reaction, and the film preparation time is 15 minutes. After the growth is finished, the temperature of the sample is cooled under the condition of not flowing hydrogen, and a single particle layer nano...

Embodiment 3

[0041] The monocrystalline silicon wafer is polished with nanometer diamond powder, and the polishing time is about half an hour. The polished silicon wafers were washed with deionized water and acetone in an ultrasonic machine, dried, and used as substrates for the growth of nano-diamond films. The hot wire chemical vapor deposition method (chemical vapor deposition equipment purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD 001) was used, with acetone as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. , The flow ratio of hydrogen gas is 200:90, the power is 2200W, the distance between the hot wire and the substrate silicon wafer is 7mm, and the working pressure is 1.63Kpa; no bias is applied during the reaction process, and the preparation time is 15 minutes; after the growth is over, The temperature of the sample is lowered and cooled under the condition of not flowing hydrogen, and a single particle layer n...

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Abstract

The invention provides a single granule layer nanometer diamond film with strong Si-V luminescence, and a production method thereof. The method comprises the following steps: producing a single granule layer nanometer diamond film with the thickness of 500-700nm on a monocrystalline silicon substrate by adopting a hot filament chemical vapor deposition technology; and carrying out heat insulation on the film in 600DEG C air for 10-50min to produce the single granule layer nanometer diamond film with strong Si-V luminescence. The nanometer diamond film obtained in the invention has single granule layer characteristics and has a thickness of 500-700nm, the speak shape of the Si-V luminescence peak of the film is sharp, the Si-V luminescence intensity is greatly improved, and the preparation is of great scientific and engineering significance to realize application of the film in fields of single photon sources, quantum information processing, photoelectron devices, biological markers, semiconductor devices and field emission displays.

Description

(1) Technical field [0001] The invention relates to a single particle layer nano-diamond film with strong Si-V luminescence (the luminescence peak in the photoluminescence spectrum is at 738nm) and a preparation method thereof. (2) Background technology [0002] The silicon-vacancy (Si-V) center in diamond has a luminescence peak at 738nm in the photoluminescence spectrum (PL spectrum), a narrow line width (~5nm), and a short luminescence lifetime (1.2ns), making Si- The V luminescent center has become a very potential single photon source, and has broad application prospects in the fields of quantum information processing, optoelectronic devices, biomarkers, semiconductor devices, and field emission displays. [0003] Constructing optically active defects in nanodiamond grains can obtain a single optically active film with stronger and narrower luminescence, laying the foundation for the realization of micronano and miniaturization of optoelectronic devices. In the nano-di...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/56B82Y30/00B82Y40/00C09K11/65
Inventor 胡晓君仰宗春
Owner ZHEJIANG UNIV OF TECH
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