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Impurities diffusion layer forming composition, n-type diffusion layer forming composition, method for manufacturing n-type diffusion layer, p-type diffusion layer forming composition, method for manufacturing p-type diffusion layer, and method for manufacturing solar cell elements

A technology of impurity diffusion and composition, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, and final product manufacturing. Effect

Inactive Publication Date: 2015-08-19
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the coating amount of the paste composition is reduced, the amount of aluminum diffused from the surface of the p-type silicon semiconductor substrate to the inside becomes insufficient.
As a result, since the desired BSF (Back Surface Field, back field) effect cannot be achieved (due to p + The effect of improving the collection efficiency of generated carriers due to the existence of the type diffusion layer), so there is a problem that the characteristics of the solar cell are degraded

Method used

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  • Impurities diffusion layer forming composition, n-type diffusion layer forming composition, method for manufacturing n-type diffusion layer, p-type diffusion layer forming composition, method for manufacturing p-type diffusion layer, and method for manufacturing solar cell elements
  • Impurities diffusion layer forming composition, n-type diffusion layer forming composition, method for manufacturing n-type diffusion layer, p-type diffusion layer forming composition, method for manufacturing p-type diffusion layer, and method for manufacturing solar cell elements

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1A

[0169] Using an automatic mortar mixing device, the P 2 o 5 -ZnO-based glass (P 2 o 5 : 30%, ZnO: 70%) powder 20g, ethyl cellulose 0.08g, and 2-(2-butoxyethoxy)ethyl acetate 2.14g were mixed to make a paste to prepare a glass with a content rate of 90% n-type diffusion layer forming composition.

[0170] Next, the prepared paste was applied on the surface of the p-type silicon substrate by screen printing, and dried on a hot plate at 150° C. for 5 minutes. Next, thermal diffusion treatment was performed in an electric furnace set at 1000° C. for 10 minutes, and then, to remove the glass layer, the substrate was immersed in 2.5% hydrofluoric acid for 90 minutes and washed with running water. Then, drying is performed.

[0171] The sheet resistance of the surface on which the n-type diffused layer-forming composition was applied was 11Ω / □, and P (phosphorus) diffused to form an n-type diffused layer. Since the sheet resistance of the back surface was 1,000,000Ω / □ or more, ...

Embodiment 2A

[0174] Using an automatic mortar mixing device, the P 2 o 5 -ZnO-based glass (P 2 o 5 : 30%, ZnO: 70%) powder 8g, ethyl cellulose 0.17g and 2-(2-butoxyethoxy) ethyl acetate 4.27g were mixed to make a paste to prepare a glass with a content rate of 65%. % n-type diffusion layer forming composition.

[0175] Next, the prepared paste was applied on the surface of the p-type silicon substrate by screen printing, and dried on a hot plate at 150° C. for 5 minutes. Next, thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000° C., and then, in order to remove the glass layer, the substrate was immersed in 2.5% hydrofluoric acid for 40 minutes and washed with running water. Then, drying is performed.

[0176] The sheet resistance of the surface on which the n-type diffused layer-forming composition was applied was 12 Ω / □, and P (phosphorus) diffused to form an n-type diffused layer. Since the sheet resistance of the back surface was 1,000,000Ω...

Embodiment 3A

[0178] Using an automatic mortar mixing device, the P 2 o 5 -ZnO-based glass (P 2 o 5 : 30%, ZnO: 70%) powder 6g, ethyl cellulose 0.91g, and 2-(2-butoxyethoxy) ethyl acetate 23.1g were mixed to make a paste, thereby preparing the glass content ratio 20% of n-type diffusion layer forming composition.

[0179] Next, the prepared paste was applied on the surface of the p-type silicon substrate by screen printing, and dried on a hot plate at 150° C. for 5 minutes. Next, thermal diffusion treatment was performed for 10 minutes in an electric furnace set at 1000° C., and then, to remove the glass layer, the substrate was immersed in 2.5% hydrofluoric acid for 30 minutes and washed with running water. Then, drying is performed.

[0180] The sheet resistance of the surface on which the n-type diffusion layer-forming composition was applied was 11Ω / □. P (phosphorus) diffuses to form an n-type diffusion layer. Since the sheet resistance of the back surface was 1,000,000Ω / □ or mor...

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Abstract

Disclosed is an impurities diffusion layer forming composition which contains a dispersion medium and a glass powder containing a donor element or an acceptor element, and wherein the glass powder content is within the range of 1-90% by mass. When the impurities diffusion layer forming composition is an n-type diffusion layer forming composition, the glass powder contains the donor element and when the impurities diffusion layer forming composition is a p-type diffusion layer forming composition, the glass powder contains the acceptor element. By coating this impurities diffusion layer forming composition and subjecting same to a heat diffusion treatment, an n-type diffusion layer or a p-type diffusion layer is manufactured and a solar cell element with an n-type diffusion layer or a p-type diffusion layer is manufactured.

Description

[0001] The present invention is a divisional application of a patent application with application number 2011800307885. The filing date of the parent application is June 24, 2011, and the priority date is June 24, 2010. The invention title of the parent application is "composition for forming impurity diffusion layer" , n-type diffused layer forming composition, n-type diffused layer manufacturing method, p-type diffused layer-forming composition, p-type diffused layer manufacturing method, and solar cell element manufacturing method”. technical field [0002] The present invention relates to a composition for forming an n-type diffused layer of a solar cell element, a method for manufacturing an n-type diffused layer, a composition for forming a p-type diffused layer, a method for manufacturing a p-type diffused layer, and a method for manufacturing a solar cell element. In other words, it relates to a technology capable of forming an n-type diffusion layer on a specific porti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50H01L21/22H01L31/0288H01L31/18
CPCY02E10/547C03C8/04C03C8/16H01L21/2225C03C3/16H01L31/0288H01L21/2255H01L31/1804C03C8/08Y02P70/50H01L21/225H01L31/04H01L31/18
Inventor 佐藤铁也吉田诚人野尻刚冈庭香町井洋一岩室光则木泽桂子足立修一郎
Owner RESONAC CORPORATION
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