A peCVD device for preparing amoled

Abstract

The invention provides a PECVD device for preparing AMOLED; and through a series of technical means that a vacuum environment external cavity is combined with an inner cavity for performing a plasma enhanced type chemical vapor deposition reaction, a base plate is subjected to 400-450 DEG C local direct high temperature heating, an interval component is adopted and cooling mechanisms are respectively arranged at the top wall and the bottom wall of a cavity body, a technical effect that a high-temperature AMOLED process is carried out by adopting a low-temperature PECVD reaction cavity is achieved, and the problems that because aluminum is used as a cavity body material of a reaction cavity in a traditional way, the material has the strength and the rigidity becoming poor and generates severe thermal deformation when facing a 400-450 DEG C high temperature environment are solved.

Description

Technical field: [0001] The invention relates to the field of AMOLED process equipment, in particular to a PECVD device for preparing AMOLED. technical background: [0002] In traditional industries such as solar energy and LCD flat panel display industries, the process temperature required to prepare nitride films, oxide films, amorphous / microcrystalline silicon films and other films by PECVD (plasma enhanced chemical vapor deposition) is usually 200-280 °C . In these PECVD equipment, due to the use of NF3 gas for cleaning and the high-temperature atmosphere in the reaction chamber during the film deposition process, the chamber material must have good anti-fluorine gas corrosion characteristics and excellent high-temperature performance. Currently, metals that meet these conditions Materials are aluminum, nickel, tantalum and titanium alloys. Among them, nickel, tantalum and titanium alloys are difficult to process into large sizes due to the limitation of the technology...

AI Technical Summary

Problems solved by technology

[0004]The melting point of general aluminum is 580-700°C, when the aluminum used to prepare the PECVD reaction chamber is heated above 350°C, the aluminum Stiffness / strength will be significantly worse, and even softening will occur, which will seriously affect the quality of deposited film in the reaction chamber. At this time, the traditional thickness of the aluminum chamber will no longer be suitable for the production of AMOLED reaction chamber

In order to meet the rigidity / strength requirements of the reaction chamber, some manufacturers will increase the thickness of the aluminum material by 5-7 times, which will undoubtedly cause a linear increase in the cost of the chamber material and increase the volume of the chamber, especially for those with inner chambers and For PECVD equipment with an external cavity, the volume of the vacuum environment also increases accordingly, which requires the use of a higher power vacuum pump, resulting in an increase in the cost of cavity components

At the same time, the huge reaction chamber also brings many difficulties to processing and transportation

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