A low tension etchant for ito/ag/ito thin films
An etching solution and low tension technology, applied in the field of etching solution, can solve the problems of poor etching effect, difficult to control etching angle, etching time and etching accuracy, and strong corrosion force, so as to improve etching efficiency, smooth lines, and corrosion force. low effect
Active Publication Date: 2018-11-27
SHENZHEN CAPCHEM TECH CO LTD
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Problems solved by technology
Existing etching solutions for ITO / Ag / ITO thin films are mainly prepared by stirring, mixing and filtering phosphoric acid, nitric acid and acetic acid. More than 80% of ITO / Ag / ITO etch poorly
Method used
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[0020] The etching solution in this example is composed of acetic acid, nitric acid, phosphoric acid, surfactant, nitrate and deionized water; wherein, the nitrate is ammonium nitrate; the surfactant is polyoxyethylene. The etching solution was prepared according to the dosage shown in Table 1. The percentages in Table 1 are percentages by weight, and the balance is deionized water. The prepared etching solution is ready for use.
[0021] The ITO / Ag / ITO film is formed on the glass substrate by DC and RF magnetron sputtering, developed and exposed to form a resist coating pattern. Then, the glass substrate was etched with the etching solution prepared in this example at 35°C, the effect after etching was observed through a scanning electron microscope (SEM), and the time taken for the etching to be completed or etched until there was no residual change was counted. The statistical results are shown in Table 1 shown.
[0022] Among them, the surface tension of the etching solut...
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Abstract
The invention discloses a low-tension etching solution used for an ITO / Ag / ITO film. The etching solution comprises the following components by weight: 10-30% of acetic acid, 1-20% of nitric acid, 40-70% of phosphoric acid, 0.1-0.5% of surfactant, 0.1-5% of nitrate and the balance of water. The etching solution can blend the components and usage amount in a reasonable, the etching solution has low surface tension, can effectively penetrate and infiltrate into a position to be etched, etching efficiency is increased, and etching angle accuracy is increased. The etching solution can effectively etch ITO / Ag / ITO with more than 80% of silver content. The corrosion force of the etching solution is relatively low, the etching solution is capable of etching under mild condition, no residue is left after etching, a line is flattened, the etching is uniform; and the low-tension etching solution is suitable for etching high precision pattern.
Description
technical field [0001] The present application relates to the field of etching solution, in particular to a low-tension etching solution for ITO / Ag / ITO thin films. Background technique [0002] Transflective high-conductivity films are important electrode materials in the field of liquid crystal displays, and new transflective high-conductivity films have become an indispensable technology in the field of liquid crystal displays. The transflective high-conductivity thin film ITO / Ag / ITO with excellent performance can be prepared by using the metal Ag with high reflectivity and high conductivity and the multilayer composite of transparent conductive oxide ITO, so the study of ITO / Ag / ITO multilayer thin film will have important Research significance and practical value. [0003] In the preparation process of the ITO / Ag / ITO multilayer film, it is necessary to etch the ITO / Ag / ITO to obtain the desired pattern or structural unit. Existing etching solutions for ITO / Ag / ITO thin fi...
Claims
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IPC IPC(8): C09K13/06
Inventor 康威梁作赵大成陈昊
Owner SHENZHEN CAPCHEM TECH CO LTD