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A kind of semiconductor device and its manufacturing method

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting device performance and reliability, achieve high integration, simple process, improve performance and reliability Effect

Active Publication Date: 2018-06-01
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, when preparing W by ALD, borane (B 2 h 6 ) and WF 6 As a precursor, B will diffuse into the metal gate and the gate insulating layer of high-k material, which will affect the performance and reliability of the device

Method used

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  • A kind of semiconductor device and its manufacturing method
  • A kind of semiconductor device and its manufacturing method
  • A kind of semiconductor device and its manufacturing method

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Embodiment Construction

[0033] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0034] In the present invention, in order to be applied to the manufacturing method of semiconductor devices in the gate-last process, the problem that the ion in the precursor diffuses downward during the formation of the top metal tungsten of the replacement gate, which affects the device performance and reduces the reliability of the device is solved. A detailed description will be given below in conjunction with specific embodiments and accompanying drawings.

[0035] First, a dummy gate structure is formed, such as figure 1 shown....

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Abstract

The invention provides a manufacturing method of a semiconductor device. The manufacturing method includes the following steps that: a gate trench is formed in a substrate, a gate dielectric layer and a metal gate layer thereon are formed in the gate trench; a diffusion barrier layer is formed on the surface of the metal gate layer; and a tungsten layer which fully fills the gate trench is formed on the diffusion barrier layer through adopting atomic layer deposition (ALD) technology. The diffusion barrier layer can effectively block the diffusion of ions in a predecessor when the tungsten layer is formed through adopting the ALD, and therefore, the performance and reliability of the device can be effectively improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] At present, the research on the manufacturing process of CMOSFET (Complementary Metal Oxide Semiconductor Field Effect Transistor) can be roughly divided into two directions, ie the gate-front process and the gate-last process. [0003] The gate-last process is currently widely used in the manufacture of advanced integrated circuit processes. It usually forms dummy gates and source and drain regions first, then removes the dummy gates and refills replacement gates of high-k metal gate stacks in the gate trenches. Since the gate is formed after the source and drain, the gate does not need to withstand a high annealing temperature in this process, and the selection of gate layer materials is wider and can better reflect the intrinsic characteristics of the material. [0004] In the p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L21/285H01L29/66477H01L29/78
Inventor 王桂磊赵超徐强杨涛
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI