Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of microarray structure on basis of DLP (digital light processing) technology and chemical vapor deposition

A chemical vapor deposition and vapor deposition technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, to achieve the effect of large selection of materials, simple equipment, and high recoverability

Inactive Publication Date: 2015-09-30
HARBIN INST OF TECH
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the preparation technology of macroscopic lattice is quite mature, but the research on the preparation of micro-nano lattice is still in the preliminary stage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of microarray structure on basis of DLP (digital light processing) technology and chemical vapor deposition
  • Preparation method of microarray structure on basis of DLP (digital light processing) technology and chemical vapor deposition
  • Preparation method of microarray structure on basis of DLP (digital light processing) technology and chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0029] Specific embodiment one: a kind of micro lattice structure preparation method based on DLP technology and chemical vapor deposition of the present embodiment, it comprises following preparation steps:

[0030] Step 1: Use DLP molding equipment to prepare a dot matrix of photosensitive resin material;

[0031] Step 2: forming a thin film on the photosensitive resin material structure by chemical vapor deposition;

[0032] Step 3: after removing the photosensitive resin on the film of step 2, a lattice structure is obtained;

[0033] Wherein, the chemical vapor deposition described in the step 2, the specific operation steps are as follows:

[0034] 1) Put the photosensitive resin lattice obtained in step 1 into the vapor deposition chamber, and replace the air in the vapor deposition chamber with an inert gas with a flow rate of 100mL / min for 5 minutes, and then heat the temperature of the vapor deposition chamber to 100°C-190°C , stop the inert purge gas after maintai...

specific Embodiment approach 2

[0038] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, the DLP molding equipment includes a digital projector, an LCD light source or an LED light source as a curing light source; the process parameters of the DLP molding equipment are: single layer The thickness is 10-150 microns, the curing time of the first layer is 20-60s, and the curing time of the single layer is 3-20s; the input file is in STL format. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0039] Embodiment 3: This embodiment is different from Embodiment 1 in that: the gasification reactant is nickel carbonyl. Others are the same as in the first embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a microarray structure on the basis of DLP (digital light processing) technology and chemical vapor deposition, relating to a preparation method of a porous material. The method comprises the following steps: 1. preparing a photosensitive resin array structure by using a DLP forming device; 2. carrying out chemical vapor deposition on the structure to prepare a surface made of metals, ceramics or any other material; and 3. removing the photosensitive resin at high temperature under the protection of inert gas. The porous structure prepared by the method can be used in the aspects of heat dissipation, energy absorption and the like, has relatively high mechanical properties under the condition of low density, and has very high structural designability.

Description

technical field [0001] The invention relates to a method for preparing a porous material, more particularly, a method for preparing a lattice structure. Background technique [0002] The study of porous materials has always been a hot spot in scientific research, as one of them, the preparation method of lattice structure. [0003] DLP molding technology is a kind of additive manufacturing technology. This technology uses digital slides to cure photosensitive resin layer by layer to make it follow the three-dimensional design. Figure 1 Layers are superimposed to form a three-dimensional solid, so it has high precision and higher speed (compared to FDM and SLA). It is fully capable of converting complex three-dimensional designs into real objects, so this technology is more suitable for regular and ordered porous structures that can be designed at the micron level. Combining this technology with chemical vapor deposition or plasma-assisted chemical vapor deposition technolo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44B29C67/00B33Y10/00
Inventor 王兵朱绍伟吴林志马力熊健
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com