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Buck type dual-power-supply silicon carbide bipolar junction transistor drive circuit and control method thereof

A technology of bipolar transistors and drive circuits, which is applied in the direction of control/regulation systems, electrical components, and adjustment of electrical variables, etc. It can solve the problems of small driving losses of driving circuits, adjustment of base current, and small driving losses, etc., to achieve reduction Driving loss, satisfaction of driving loss, and effect of reducing circuit power consumption

Inactive Publication Date: 2015-10-07
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a Buck type dual power supply SiC bipolar transistor drive circuit and its control method, which not only has small drive loss and fast switching speed under rated working conditions, but also can Adjust the base current in time according to the load condition to minimize the drive loss, which solves the problem that the existing drive circuit of silicon carbide bipolar transistors cannot meet the requirements of small drive loss and fast switching speed at the same time, and cannot adjust the base current according to the load condition. question

Method used

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  • Buck type dual-power-supply silicon carbide bipolar junction transistor drive circuit and control method thereof
  • Buck type dual-power-supply silicon carbide bipolar junction transistor drive circuit and control method thereof
  • Buck type dual-power-supply silicon carbide bipolar junction transistor drive circuit and control method thereof

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Embodiment Construction

[0040] Embodiments of the present invention will be described in detail below, and the embodiments described below with reference to the accompanying drawings are exemplary, and are only used to explain the present invention, and cannot be construed as limiting the present invention.

[0041]Those skilled in the art will understand that unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the word "comprising" used in the description of the present invention refers to the presence of said features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, Integers, steps, operations, elements, components, and / or combinations thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element o...

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Abstract

The invention discloses a Buck type dual-power-supply silicon carbide bipolar junction transistor drive circuit and a control method thereof, and belongs to the technical field of power electronic circuits. The drive circuit comprises a high-voltage quick conduction branch, a low-voltage driving Buck circuit and a disconnection loop switch. The control method comprises the steps that a high-voltage power supply is adopted to supply power when a transistor is conducted so that relatively high pulse current is provided and the conduction process is accelerated; a low-voltage power supply is adopted to supply power via the Buck circuit when switching tubes are steadily conducted; and the size of base electrode current of the transistor is adjusted by controlling the switching tubes in the Buck circuit so that base electrode current is enabled to synchronously change along with emission electrode current. Compared with existing SiC BJT drive circuits, the requirements of low driving loss and high switching speed can be met simultaneously, and base electrode current can be synchronously adjusted according to the load condition so that the Buck type dual-power-supply silicon carbide bipolar junction transistor drive circuit is suitable for being applied to application occasions with great change of load current.

Description

technical field [0001] The invention discloses a Buck type dual power supply silicon carbide bipolar transistor (SiC BJT, Silicon Carbide Bipolar Junction Transistor) drive circuit and a control method thereof, belonging to the technical field of power electronic circuits. Background technique [0002] At present, there are three driving methods for SiC BJT given in the literature: single power supply drive, dual power supply drive circuit and discrete dual power supply drive. [0003] Such as figure 1 The single power supply drive circuit shown, through the low-side switch tube S 1 , S 2 The series branch formed is connected between the power supply VCC and the ground, and the resistance R B Connected between the midpoint of the series branch and the base of the SiC BJT, the energy storage capacitor C B Connected to the resistor R B ends. This driving circuit cannot meet the requirements of the lowest driving loss and the fastest switching speed at the same time. In ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/156
Inventor 陈音如秦海鸿朱梓悦马策宇余忠磊
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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