iii-group V nanostructures and fabrication methods thereof
A nanostructure and manufacturing method technology, applied in the field of nanomaterial manufacturing, can solve the problems of difficult removal of metal nanoparticles, material damage, complicated process, etc., and achieve the effects of large specific surface area, low cost, and simple preparation method.
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Embodiment 1
[0030] a) Clean the surface of the GaN substrate; form an ohmic contact electrode on the GaN substrate; immerse the GaN substrate in the ionic liquid 1-butyl-3-methylimidazole perchlorate, and add a bias voltage of 8V and a UV light source to react 25min, the GaN substrate is anode etched to prepare a GaN substrate with a rough surface;
[0031] b) For the obtained GaN rough surface, soak it in the prepared aqua regia solution at room temperature, stir it ultrasonically for 25 minutes, and then let it stand for 45 hours.
[0032] figure 1 Shown is the SEM figure of the structure that embodiment 1 obtains, by figure 1 It can be seen that the obtained structure is a three-dimensional layered porous structure, and the morphology and structure are consistent (hexagonal), and the layered distribution is obvious.
Embodiment 2
[0034] a) Clean the surface of the GaN substrate; form an ohmic contact electrode on the GaN substrate; immerse the GaN substrate in the ionic liquid 1-butyl-3-methylimidazole perchlorate, and add a bias voltage of 7V and a UV light source to react 25min, the GaN substrate is anode etched to prepare a GaN substrate with a rough surface;
[0035] b) For the obtained GaN rough surface, soak it in the prepared aqua regia solution at room temperature, stir it ultrasonically for 15 minutes, and then let it stand for 45 hours.
[0036] figure 2 Shown is the SEM figure of the structure that embodiment 2 obtains, by figure 2 It can be seen that the obtained structure is a three-dimensional layered porous structure, and the morphology and structure are consistent (hexagonal), and the layered distribution is obvious.
Embodiment 3
[0038] a) Clean the surface of the GaN substrate; form an ohmic contact electrode on the GaN substrate; immerse the GaN substrate in a 0.5M H2SO4 acidic solution, add a bias voltage of 6V and a UV light source, and react for 15 minutes to etch the GaN substrate anode , preparing a GaN substrate with a rough surface;
[0039] b) For the obtained GaN rough surface, soak it in the prepared aqua regia solution at room temperature, stir it ultrasonically for 40 minutes, and then let it stand for 62 hours.
[0040] image 3 Shown is the SEM figure of the structure that embodiment 3 obtains, by image 3 It can be seen that the obtained structure is a three-dimensional layered porous structure, and the morphology and structure are consistent (hexagonal), and the layered distribution is obvious.
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