Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of surface-modifying polyether ether ketone material

A polyether ether ketone modification technology, applied in the field of surface modification of polyether ether ketone materials by plasma immersion ion implantation technology

Active Publication Date: 2015-10-14
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to overcome the defects of the existing methods for surface modification of polyether ether ketone materials, and improve the biocompatibility and antibacterial properties of polyether ether ketone materials. Method for surface modification of polyether ether ketone material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of surface-modifying polyether ether ketone material
  • Method of surface-modifying polyether ether ketone material
  • Method of surface-modifying polyether ether ketone material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] After polishing, the 10mm×10mm×1mm carbon fiber reinforced polyether ether ketone was cleaned ultrasonically with acetone and deionized water in sequence, each time for 30 minutes. After cleaning, it was dried in an oven at 80°C and stored properly. Using plasma immersion ion implantation technology, zinc ions were implanted into the carbon fiber reinforced polyetheretherketone matrix. The specific process parameters are shown in Table 1, and the obtained sample number was Zn-180.

[0062] Injection bias (kV) 30 Pulse width (μs) 450 Injection time (min) 180 Background vacuum (Pa) 3.5×10 -3 Cathode trigger pulse width (μs) 500 Frequency (Hz) 8

Embodiment 2

[0064] After polishing, the 10mm×10mm×1mm carbon fiber reinforced polyetheretherketone is ultrasonically cleaned with acetone and deionized water, each time for 30min, after cleaning, it is dried in an oven at 80°C and stored properly. Plasma immersion ion implantation technology was used to implant zinc / oxygen binary ions into the carbon fiber reinforced polyetheretherketone matrix. The specific process parameters are shown in Table 2, and the obtained sample number is Zn-O.

[0065] Table 2 zinc / oxygen binary ion implantation parameters:

[0066]

[0067]

[0068] figure 1 It is the scanning electron microscope morphology of the surface of carbon fiber reinforced polyetheretherketone and unmodified carbon fiber reinforced polyetheretherketone obtained through the modification treatment of Example 1 and Example 2. In the figure: CFRPEEK is unmodified carbon fiber reinforced polyether ether Ketone, Zn-180 is the carbon fiber reinforced polyether ether ketone obtained th...

Embodiment 3

[0070] After polishing, the 10mm×10mm×1mm carbon fiber reinforced polyether ether ketone was cleaned ultrasonically with acetone and deionized water in sequence, each time for 30 minutes. After cleaning, it was dried in an oven at 80°C and stored properly. Using plasma immersion ion implantation technology, zinc ions were implanted into the carbon fiber reinforced polyetheretherketone matrix. The specific process parameters are shown in Table 3.

[0071] Injection bias (kV) 30 Pulse width (μs) 450 Injection time (min) 60 Background vacuum (Pa) 3.5×10 -3 Cathode trigger pulse width (μs) 500 Frequency (Hz) 8

[0072] The surface of carbon fiber reinforced polyetheretherketone obtained by modification has obvious nanoparticle structure, and zinc element can be introduced to the surface of polyetheretherketone by zinc plasma immersion ion implantation, and the zinc element on the surface coexists in the form of elemental zinc and zinc oxide . ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method of surface-modifying a polyether ether ketone material, which includes a step of performing zinc ion implantation or zinc / oxygen binary ion implantation through the surface of the polyether ether ketone material through a plasma immersed ion implantation technology to obtain the modified polyether ether ketone material.

Description

technical field [0001] The invention relates to a method for surface modification of polyether ether ketone materials, in particular to a method for surface modification of polyetherether ketone materials through plasma immersion ion implantation technology. Background technique [0002] In recent years, with the continuous improvement and development of the theory and technology for the preparation and use of biological materials, the application prospects of polymer implant materials will be broader. The elastic modulus of medical polyetheretherketone material (PEEK) best matches human bone tissue, which can effectively reduce bone resorption and bone atrophy caused by stress shielding effect, and has outstanding fatigue resistance, suitable for long-term implantation of medical implant devices (Biomaterials 2007, 28:4845-4869.). However, PEEK has poor biological activity and is not easy to bond with human bone tissue after implantation in the human body. At the same time...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/48C23C14/20C23C14/08C08J7/12
Inventor 刘宣勇陆涛
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com