Infrared shielding filter, solid-state imaging element, and imaging/display device

Abstract

An infrared shielding filter is provided with an infrared absorption layer formed from a transparent resin that includes infrared absorbing bodies and a selective wavelength shielding layer laminated on this infrared absorption layer, and satisfies the following requirements. (i) In a spectral transmittance curve for an incident angle of 0°, an average transmittance of 80% or greater for wavelengths of 450 - 600 nm, a transmittance of 2.0% or less for wavelengths of 700 - 1200 nm, and transmittance variation D0 given by the following equation of less than 0.04, D0(% / nm) = (Tmax∙0 − Tmin∙0) / (λ(Tmax∙0) − λ(Tmin∙0)) (ii) In a spectral transmittance curve for an incident angle of 30°, an average transmittance of 80% or greater for wavelengths of 450 - 600 nm, a transmittance of 2.0% or less for wavelengths of 700 - 1200 nm, and transmittance variation D30 given by the following equation of less than 0.04. D30(% / nm) = (Tmax∙30 − Tmin∙30) / (λ(Tmax∙30) − λ(Tmin∙30))

Description

technical field [0001] The present invention relates to an infrared shielding filter, a solid-state imaging device and an imaging / display device using the infrared shielding filter. Background technique [0002] In recent years, infrared shielding filters that transmit light in the visible wavelength range (420 to 630 nm) and block light in the near infrared wavelength range (700 to 1100 nm) have been used in various applications. [0003] For example, digital cameras, digital video, mobile phone cameras and other imaging devices using solid-state imaging elements such as CCD (Charge Coupled Device, Charge Coupled Device), CMOS image sensor (Complementary Metal Oxide Semiconductor Image Sensor, Complementary Metal Oxide Semiconductor Image Sensor), etc., use light receiving elements Conventionally, display devices such as automatic illuminance meters have spectral sensitivity ranging from the visible light wavelength region to the near-infrared wavelength region near 1100 nm...

AI Technical Summary

Problems solved by technology

However, in this case, the thickness of the device cannot be met, such as the above-mentioned thinning requirements of the digital camera.

In addition, it is also possible to extend the shielded wavelength region caused by the dielectric multilayer film to a long wavelength region exceeding 1200 nm, but the number of laminations and the total film thickness must be increased, resulting in an increase in the number of steps, and there is also a problem of adhesion to the film during film formation. The problem of foreign matter on the surface, the reduction of product yield, the increase of manufacturing cost and other issues

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