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A kind of nano-magnetic multilayer film for temperature sensor and its manufacturing method

A temperature sensor and multi-layer film technology, applied in the manufacture/processing of magnetic thin films, electromagnetic devices, thermometers, etc., can solve the problems of large volume, poor linearity of thermistors, and small application range

Active Publication Date: 2017-10-13
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing temperature sensors have their own disadvantages. Thermocouple temperature sensors are not conducive to integration due to their large size and require a cold junction temperature compensation circuit; The range is small; the linearity of the thermistor is poor, the measurement accuracy is not high, and the measurement range is narrow

Method used

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  • A kind of nano-magnetic multilayer film for temperature sensor and its manufacturing method
  • A kind of nano-magnetic multilayer film for temperature sensor and its manufacturing method
  • A kind of nano-magnetic multilayer film for temperature sensor and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] figure 1 Shown is a magnetic nano-multilayer film according to an embodiment of the present invention, which includes from bottom to top: substrate 1 (abbreviated as SUB), seed layer 2 (abbreviated as SL), bottom composite magnetic layer 3, intermediate barrier layer 4 (referred to as Space), the top composite magnetic layer 5 and the cover layer 6 (referred to as CAP), wherein under certain conditions, the magnetic moment direction of the top cover layer 5 is antiparallel to the magnetic moment direction of the bottom composite magnetic layer 3 . Each layer will be described in detail below.

[0065] Substrate 1 is Si substrate, SiC, glass substrate or Si-SiO 2 The substrate, or organic flexible substrate, etc., has a thickness of 0.3-1 mm.

[0066] The seed layer (also called the bottom layer) 2 is a non-magnetic metal layer (including a single layer or a multilayer) with good electrical conductivity and a tighter bond with the substrate, and its material is prefera...

example 1

[0083] 1) Choose a Si‐SiO with a thickness of 1mm 2 The substrate is used as the substrate SUB, and the vacuum on the magnetron sputtering equipment is better than 2×10 ‐6 Pa, the deposition rate is 0.1nm / s, and the argon pressure during deposition is the condition of 0.07Pa, the seed layer SL of Ta(5nm) / Ru(20nm) / Ta(5nm) is deposited on the substrate;

[0084] 2) On the magnetron sputtering equipment, the vacuum is better than 2×10 ‐6 Pa, the deposition rate is 0.1nm / s, and the argon pressure is 0.07Pa, and the first antiferromagnetic layer AFM1 with a thickness of 15nm of IrMn is deposited on the seed layer SL;

[0085] 3) On the magnetron sputtering equipment, the vacuum is better than 2×10 ‐6 Pa, the deposition rate is 0.06nm / s, the condition of argon pressure is 0.07Pa, on the first antiferromagnetic layer AF1 deposit the first ferromagnetic layer FM1(1) of CoFeB with a thickness of 2.5nm;

[0086] 4) On the magnetron sputtering equipment, the vacuum is better than 2×10...

example 2~6

[0097] Prepare example 2~6 by the method similar to example 1, difference is the material of the magnetic nano multilayer film of example 2~6, and its structure is A namely:

[0098] SUB / SL / AFM1 / FM1(1) / NM1 / FM1(2) / Space / FM2(1) / NM2 / FM2(2) / AFM2 / CAP as image 3 The composition and thickness of each layer are shown in Table 1 below.

[0099] Table 1

[0100]

[0101]

[0102] (Unless marked, the thickness units in the list are in nanometers)

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Abstract

An in-plane magnetic nano-multilayer film used for temperature sensors and its manufacturing method, the multilayer film is divided into three categories: the first category structure from bottom to top includes: substrate, bottom layer, bottom composite magnetic layer, intermediate potential Barrier layer, top composite magnetic layer and cover layer, wherein the top composite magnetic layer and the bottom composite magnetic layer adopt direct pinning or indirect pinning structure; the second type includes from bottom to top: substrate, bottom layer, bottom pinning layer, The middle barrier layer, the top pinning layer and the cover layer, the top pinning layer and the bottom pinning layer adopt a direct pinning or indirect pinning structure; the third type of magnetic nano-multilayer film structure includes from bottom to top: Substrate, bottom layer, bottom magnetic multilayer film, bottom magnetic layer, intermediate barrier layer, top magnetic layer, top magnetic multilayer film and cover layer, the magnetic moment of said magnetic multilayer film is perpendicular to the film surface, bottom and top The coercivity of the multilayer film is different, and the magnetic moments of the upper and lower ferromagnetic layers are in antiparallel arrangement through annealing treatment.

Description

technical field [0001] The invention relates to a nano-magnetic multilayer film for a temperature sensor based on a magnetic tunnel junction (MTJ) and a manufacturing method thereof. Background technique [0002] The core element of the present invention is a magnetic tunnel junction (MTJ) device, and its core structure is a sandwich structure in which an insulating barrier layer is sandwiched between two layers of ferromagnetic materials. Under the action of an external magnetic field or pinning, the magnetic moments of the two ferromagnetic layers can be in a parallel or antiparallel state, and the resistance of the magnetic tunnel junction in the two states is very different, which is the so-called tunneling magnetoresistance (TMR) effect. . Magnetic tunnel junctions have been used in magnetic field sensors and magnetic random access memories. In addition, the phenomenon that the resistance of the antiparallel state changes linearly with temperature is also observed in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/12G01K7/16H10N50/10H10N50/01H10N50/80
CPCG01K7/36H01F10/3272H10N50/01H10N50/10H10N50/80G01K7/38
Inventor 韩秀峰袁忠辉刘盼于国强丰家峰张殿琳
Owner INST OF PHYSICS - CHINESE ACAD OF SCI