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Manufacturing method capable of solving split-gate flash memory programming crosstalk failure problem

A technology of programming crosstalk and manufacturing method, applied in the direction of semiconductor/solid-state device manufacturing, electric solid-state device, semiconductor device, etc., can solve the problems of low recess height, PTC, low word line height, etc. The effect of photoresist residue

Active Publication Date: 2015-12-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0009] However, the high-voltage gate oxide layer 40 formed in the prior art is usually relatively thin. When the word line is etched, the height of the word line after etching is low, especially the height H2 of the formed recess is low, which is easy to cause PTC. question

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  • Manufacturing method capable of solving split-gate flash memory programming crosstalk failure problem
  • Manufacturing method capable of solving split-gate flash memory programming crosstalk failure problem
  • Manufacturing method capable of solving split-gate flash memory programming crosstalk failure problem

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Embodiment Construction

[0026] The manufacturing method for solving the programming crosstalk failure of split-gate flash memory according to the present invention will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described herein, while still achieving the advantageous effects of the present invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0027] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation detail...

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Abstract

The invention provides a manufacturing method capable of solving a split-gate flash memory programming crosstalk failure problem. The manufacturing method, by removing use of diluted hydrofluoric acid in an ashing process after logic gate etching, achieves the purpose of increasing thickness of a word line etching protection layer, finally heightens the heights of the word lines, and solves the split-gate flash memory programming crosstalk failure problem; and meanwhile, the ashing process and a light resistance removing process are adopted for two times to well remove the light resistance, and the problem of light resistance residue caused by that the diluted hydrofluoric acid is not used in the light resistance removing process after the logic gate etching is avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method for solving cross-talk failure in split-gate flash memory programming. Background technique [0002] Random access memory (such as DRAM and SRAM) has the problem of data loss after power failure during use. [0003] In order to overcome this problem, various flash memories have been designed and developed. The flash memory based on the floating gate concept has become a more general flash memory due to its smaller cell size and good working performance. [0004] Flash memory includes two basic structures: gate stack (stackgate) and split gate (splitgate) structure. Among them, the gate stack flash memory includes: a tunnel oxide layer formed on the semiconductor substrate in sequence, a floating silicon nitride layer for storing electrons, a control oxide layer, and a control gate polysilicon layer for controlling electron storage and release. ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L21/027H10B41/40H10B69/00
Inventor 徐涛曹子贵王卉陈宏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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