Method for stroke growth of ZnO
A technology of substrate and photoresist, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems that the stroke width of nanomaterials cannot be less than 1 μm, the preparation process is complicated, and the production cost is high, and the preparation process is fast. High efficiency, simple method, and low equipment requirements
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Embodiment 1
[0028] A method for growing ZnO in strokes comprises the steps:
[0029] (1) Select a substrate with a lattice mismatch degree of ≤5% with ZnO. In this embodiment, GaN is selected, and S1805 photoresist is spin-coated on the surface of the cleaned GaN substrate. The thickness of the spin-coated photoresist is 0.5 μm , and then lithographically patterned, such as image 3 Shown is a schematic diagram of the growth substrate after photolithography. A groove pattern is photoetched on the substrate, and the stroke width can reach 500 nanometers, which overcomes the problem in the prior art that the line groove width of photolithography cannot be less than 1 micron. From figure 1 It can be seen from the figure that what the prior art describes is a wire groove, image 3 As can be seen from the figure, what the method of the present invention traces is a depressed groove, no longer a line groove, and the width between the line grooves cannot be less than 1 micron, while the width ...
Embodiment 2
[0035] A method for growing ZnO in strokes comprises the steps:
[0036] (1) Select a substrate with a lattice mismatch degree ≤ 5% with ZnO. In this embodiment, GaN is selected, and S1805 photoresist is spin-coated on the surface of the cleaned GaN substrate. The thickness of the spin-coated photoresist is 1.0 μm , and then photolithographically patterned.
[0037] (2) The substrate after photolithography is plasma-treated for 4 minutes in a nitrogen environment with a pressure of 100 Pa, and the radio frequency power for forming the plasma is 130W; the substrate is cleaned through plasma pretreatment, and the substrate does not need to be grown. ZnO nucleation inducers (such as residual photoresist, etc.) in the area allow ZnO to nucleate and grow along the edge of the photolithographic pattern.
[0038] (3) Place the plasma-treated substrate in step (2) in zinc nitrate (Zn(NO 3 ) 2 ) and hexamethylenetetramine (HMTA) in an aqueous solution mixed at a molar ratio of 1:1, ...
Embodiment 3
[0040] A method for growing ZnO in strokes comprises the steps:
[0041] (1) Select a substrate with a lattice mismatch degree of ≤5% with ZnO. In this embodiment, GaN is selected, and S1818 photoresist is spin-coated on the surface of the cleaned GaN substrate. The thickness of the spin-coated photoresist is 1.5 μm , and then photolithographically patterned.
[0042](2) Treat the substrate after lithography with plasma for 5 minutes in an argon gas environment with a pressure of 250Pa, and the radio frequency power for forming plasma is 170W; the substrate is cleaned by plasma pretreatment, and the substrate does not need to be grown ZnO nucleation inducers (such as residual photoresist, etc.) in the area, allowing ZnO to nucleate and grow along the edge of the photolithographic pattern.
[0043] (3) Place the plasma-treated substrate in step (2) in zinc nitrate (Zn(NO 3 ) 2 ) and hexamethylenetetramine (HMTA) in an aqueous solution mixed at a molar ratio of 1:1, the conce...
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