Thin film capable of simultaneously achieving anti-reflection and multi-structure light trapping, and preparation method thereof

A multi-structure, light-trapping technology, applied in photovoltaic power generation, electrical components, circuits, etc., can solve problems that do not involve the need for anti-reflection at the interface of transparent conductive electrodes and glass substrates, and achieve significant effects, simple operation, and low cost Effect

Inactive Publication Date: 2015-12-16
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Obviously, none of the above-mentioned patents involves the anti-reflection requirements between the transparent conducti

Method used

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  • Thin film capable of simultaneously achieving anti-reflection and multi-structure light trapping, and preparation method thereof
  • Thin film capable of simultaneously achieving anti-reflection and multi-structure light trapping, and preparation method thereof
  • Thin film capable of simultaneously achieving anti-reflection and multi-structure light trapping, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] (1) Preparation of hollow SiO 2 Nanoparticle sol, specifically:

[0058] (1-1) Disperse ammonia monohydrate and polyacrylic acid in deionized water to obtain mixed solution I;

[0059] (1-2) Add mixed solution I and tetraethyl orthosilicate to absolute ethanol in turn to obtain mixed solution II. The moles of tetraethyl orthosilicate, deionized water, ammonia monohydrate, ethanol and polyacrylic acid in mixed solution II The ratio is 1:62:25:687:0.012;

[0060] Tetraethyl orthosilicate is added in 5 times, the amount of each addition is equal, and the time interval between two adjacent additions is 1h;

[0061] (1-3) Stir the mixed solution II continuously when adding, and continue to stir for 10 hours after all the tetraethyl orthosilicate is added, and then reflux after the stirring is completed to obtain hollow SiO 2 nanoparticle sol.

[0062] The hollow SiO prepared in this embodiment 2 Hollow SiO in nanoparticle sol 2 The mass percentage of nanoparticles is 0...

Embodiment 2

[0075] (1) Preparation of hollow SiO 2 Nanoparticle sol, specifically:

[0076] (1-1) Disperse ammonia monohydrate and polyacrylic acid in deionized water to obtain mixed solution I;

[0077] (1-2) Add mixed solution I and tetraethyl orthosilicate to absolute ethanol in turn to obtain mixed solution II. The moles of tetraethyl orthosilicate, deionized water, ammonia monohydrate, ethanol and polyacrylic acid in mixed solution II The ratio is 1:92:38:500:0.024;

[0078] Tetraethyl orthosilicate is added in 5 times, the amount of each addition is equal, and the time interval between two adjacent additions is 1h;

[0079] (1-3) Stir the mixed solution II continuously when adding, and continue to stir for 10 hours after all the tetraethyl orthosilicate is added, and then reflux after the stirring is completed to obtain hollow SiO 2 nanoparticle sol.

[0080] The hollow SiO prepared in this embodiment 2 Hollow SiO in nanoparticle sol 2 The mass percentage of nanoparticles is 0...

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Abstract

The present invention discloses a thin film capable of simultaneously achieving anti-reflection and multi-structure light trapping, comprising a dielectric thin film layer, a main body thin film layer and a transparent conducting oxide layer in order from the bottom up; wherein the refractive index of the dielectric thin film layer is 1.3-2; the main body thin film layer is formed by film formation of sol B, the sol B is prepared by hybridization processing of hollow SiO2 nano particle sol and nano binder sol; the mass ratio of the hollow SiO2 nano particle sol to the nano binder sol in the sol B is 1:0-1; the transparent conducting oxide layer is contacted with the main body thin film layer, and transparent conducting oxides in the transparent conducting oxide layer are fused with hollow SiO2 nano particles in the main body thin film layer to form a transition region. The thin film of the present invention can simultaneously achieve anti-reflection and multi-structure light trapping, and has good effects on both long wavelength light and short wavelength light.

Description

technical field [0001] The invention relates to the field of preparation of thin-film solar cells, in particular to a thin film capable of simultaneously realizing antireflection and multi-structure light trapping and a preparation method thereof. Background technique [0002] A thin-film solar cell usually consists of an antireflection (AR) photovoltaic glass substrate, a front transparent conductive oxide (TCO) electrode, a photoelectric conversion functional layer, and a back reflection layer. Since the photoelectric conversion functional layer of the thin-film battery is very thin, usually less than the absorption length, the textured surface of the front electrode uses the principle of multi-level reflection to change the direction of the incident light to form total internal reflection, increase the number of light transmissions in the battery, and obtain a greater equivalent Optical path, suppress light escape, so as to obtain light trapping effect. Through the multi...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0236
CPCY02E10/50H01L31/022475H01L31/022483H01L31/02366
Inventor 宋伟杰鲁越晖张景李佳郑立人张贤鹏
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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