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MEMS (Micro-Electro-Mechanical System) integrated composite sensor and machining method thereof

A composite sensor and processing method technology, applied in the direction of instruments, electric solid devices, semiconductor devices, etc., can solve the problems of poor uniformity of thickness and density, difficult quality monitoring, large dispersion of acceleration sensor zero point and sensitivity, etc., to improve the dynamic characteristics, avoid asset investment, and ensure consistent effects

Active Publication Date: 2015-12-23
GUANGDONG HEWEI INTEGRATED CIRCUIT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the thickness and density uniformity of the material deposited by electroplating on the entire wafer is very poor, resulting in a large dispersion of the zero point and sensitivity of the acceleration sensor on the same wafer, which increases the cost of subsequent chips. Cost of Zero Compensation and Sensitivity Compensation
Another disadvantage of this method is that the electroplating process is not a standard CMOS process, and many IC manufacturers do not have this equipment. This step of process outsourcing makes it difficult to monitor the quality, and investing in electroplating equipment will increase the investment in fixed assets.

Method used

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  • MEMS (Micro-Electro-Mechanical System) integrated composite sensor and machining method thereof
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  • MEMS (Micro-Electro-Mechanical System) integrated composite sensor and machining method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] Such as figure 1 , 2 As shown, in this embodiment, a MEMS integrated composite sensor according to the present invention includes a oriented wafer as a substrate silicon 100 material, and a piezoresistive acceleration sensor is arranged on the same side of the wafer 101 and a pressure sensor 103; the acceleration sensor 101 has a cantilever beam, and a mass block connected to the cantilever beam, the cantilever beam and the mass block are in one structure, and the thickness of the mass block is greater than the thickness of the cantilever beam; the pressure sensor 103 has a sensitive film, and the sensitive film The thickness of the cantilever beam is the same as or different from that of the cantilever beam; both the cantilever beam and the mass block are part of the wafer and processed by etching. The composite sensor also includes a temperature sensor 102 . An upper cover 104 for protecting the acceleration sensor 101 is provided outside the acceleration sensor 10...

Embodiment 2

[0067] Such as Figure 3-13 Shown:

[0068] A method for processing a MEMS integrated composite sensor, etching a mass block slot 204, a cantilever beam slot 205, and a sensitive film for determining the thickness of a mass block, a cantilever beam, and a sensitive film on a wafer 200 with a crystal orientation Slots 206: Etch the above-mentioned slots twice to form second-level grooves 207 at the bottom of each slot; connect the corresponding second-level grooves 207 by etching, and form them under the proof mass, cantilever beam, and sensitive film Cavity 208, and ensure that the cavity 208 below the mass block communicates with the cavity 208 below the cantilever beam; the piezoresistor 209 of the acceleration sensor and the piezoresistor 209 of the pressure sensor are generated on the surface of the wafer 200 and the temperature sensitive resistor 210, and perform metal wiring; etch the silicon film by dry etching to release the acceleration sensor structure.

[0069] I...

Embodiment 3

[0087] Such as image 3 , 14 -18 shows:

[0088] A method for processing a MEMS integrated composite sensor, etching a mass block slot 303, a cantilever beam slot 304, and a sensitive film for determining the thickness of a mass block, a cantilever beam, and a sensitive film on a wafer 300 with a crystal orientation Grooves 305: Etch the above grooves twice to form second-level grooves 306 at the bottom of each groove; connect the corresponding second-level grooves 306 by etching, and form them under the proof mass, cantilever beam and sensitive film Cavity 307, and ensure that the cavity 307 below the mass block communicates with the cavity 307 below the cantilever beam; the piezoresistor 308 of the acceleration sensor and the piezoresistor 308 of the pressure sensor are generated on the surface of the wafer 300 and the temperature sensitive resistor 309, and perform metal wiring; etch the silicon film by dry etching to release the acceleration sensor structure.

[0089] ...

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Abstract

The invention discloses an MEMS (Micro-Electro-Mechanical System) integrated composite sensor. The MEMS integrated composite sensor comprises a <111> crystal orientation wafer serving as a substrate silicon material, wherein an acceleration sensor, a pressure sensor and a temperature sensor are arranged on the same side of the wafer; the acceleration sensor is provided with a cantilever beam and a mass block which is connected with the cantilever beam; the cantilever beam is integrated with the mass block; the thickness of the mass block is greater than the thickness of the cantilever beam; the pressure sensor is provided with a sensitive film; the thickness of the sensitive film is the same as or different from the thickness of the cantilever beam; and both the cantilever beam and the mass block are parts of the wafer, and are machined by etching. Meanwhile, the invention also discloses a machining method of the sensor. The sensor machined with the method has high performance consistency with a sensor on the same wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductor product processing, in particular to a MEMS integrated composite sensor and a processing method thereof. Background technique [0002] With the continuous development of MEMS technology and the maturity of silicon micromachining technology, composite sensors integrating silicon micromachined acceleration sensors and pressure sensors are widely used in automobile tires due to their low price, high precision and suitability for mass production. pressure monitoring. [0003] Chinese patent document CN102285633B discloses a manufacturing method for a composite integrated sensor structure, including steps: providing a substrate, forming a doped region thereon; etching the substrate to form a groove for making a cavity; Deposit the barrier layer at the bottom; remove the barrier layer on the surface of the substrate and the bottom of the groove, and form a sidewall protection layer on the sidewal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81B7/00B81B3/00B81C1/00G01D21/02
Inventor 周志健陈磊邝国华
Owner GUANGDONG HEWEI INTEGRATED CIRCUIT TECH