Multi-resistance-state double-layer film resistance random access memory and manufacturing method therefor

A double-layer thin-film, multi-resistance state technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that the preparation method of resistive memory has not been reported, achieve stable retention characteristics and cycle characteristics, and be widely used Effect of foreground, large memory window

Active Publication Date: 2015-12-23
江苏惠沣环保科技有限公司
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, a Ga-based 2 o 3 /TiO:Cu multi-resistive double-layer thin film s

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-resistance-state double-layer film resistance random access memory and manufacturing method therefor
  • Multi-resistance-state double-layer film resistance random access memory and manufacturing method therefor
  • Multi-resistance-state double-layer film resistance random access memory and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Further illustrate the implementation steps of the present invention below by specific example:

[0030] Take a piece of ITO substrate, ultrasonically clean it in deionized water, acetone, deionized water, ethanol, deionized water for 5min, 15min, 5min, 15min, 5min, and dry naturally. The cleaned substrate was placed in the vacuum chamber of radio frequency magnetron sputtering, using Cu target (99.9%) and TiO 2 Target (99.9%) TiO:Cu films were deposited by co-sputtering with two targets. The chamber vacuum before sputtering is 1.6×10 -5 pa, the chamber pressure during sputtering is 1.0Pa, the argon gas flow in the chamber is 25sccm, the film deposition temperature is 300K at room temperature, the sputtering power of Cu target is 25W, TiO 2 The target sputtering power was 150W, and the total sputtering time was 1.0 hour. The resulting TiO:Cu film was vacuum annealed to a vacuum degree of 1.6×10 -5 pa, the annealing temperature is 573K, and the annealing time is 1 ho...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a multi-resistance-state double-layer film resistance random access memory and a manufacturing method therefor. The resistance random access memory has stable maintaining property and multi-value storage performance; and particularly, Ti/Au is taken as an upper electrode, ITO is taken as a substrate and a lower electrode, an ITO substrate is successively coated with TiO:Cu and Ga2O3 films by utilizing a radio-frequency magnetron deposition technology to form a resistance change layer, and then Ti and Au films are sputtered on the ITO substrate and the film coated with Ga2O3, so that a memory device with an ITO/TiO:Cu/Ga2O3/Ti/Au structure is manufactured, and a multi-value storage function is realized. The multi-resistance-state double-layer film resistance random access memory has the superiorities that single-pole or double-pole resistance change is generated through motion of defects at a heterojunction interface, the manufactured resistance random access memory device has stable maintaining property, cycle property and multi-resistance-state resistance random access memory performance, the memory capacity of the memory device is expanded, and the service life of the memory device is prolonged.

Description

technical field [0001] The invention relates to a method for preparing a non-volatile resistive memory device, in particular to a resistive memory with a multi-resistance state double-layer film structure and a preparation method thereof. technical background [0002] Resistive RAM (RRAM) has the advantages of simple structure, high speed, low power consumption and easy 3D integration, and is an important new memory of the next generation. The principle of RRAM is that the resistance of the device changes reversibly between a low-resistance state (0) and a high-resistance state (1) under the action of an applied voltage, and the obtained resistance can be maintained after the external electric field is removed. In multi-value storage, more (for example, 0, 1, 2) stable states (that is, multiple resistance states in resistive memory) can be realized corresponding to different storage values. The application of multi-value storage technology can increase storage density, Incr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L45/00H01L21/363
Inventor 金康康
Owner 江苏惠沣环保科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap