A device and method for preparing superhard and supersmooth tetrahedral carbon films by magnetron sputtering

A technology of magnetron sputtering and tetrahedral carbon, which is applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., and can solve the problem that magnetron sputtering cannot prepare superhard carbon films and can not be prepared at one time Smooth superhard carbon film and other problems, to achieve the effect of good surface finish

Active Publication Date: 2019-03-01
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] The purpose of the present invention is to solve the problem that arc ion plating cannot prepare smooth superhard carbon films at one time, and also to solve the problem that magnetron sputtering cannot prepare superhard carbon films, and proposes a method for preparing superhard superhard carbon films by magnetron sputtering. Apparatus and method for smooth tetrahedral carbon films

Method used

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  • A device and method for preparing superhard and supersmooth tetrahedral carbon films by magnetron sputtering
  • A device and method for preparing superhard and supersmooth tetrahedral carbon films by magnetron sputtering
  • A device and method for preparing superhard and supersmooth tetrahedral carbon films by magnetron sputtering

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Embodiment 1

[0030] Such as figure 1 As shown, a device for preparing ultra-hard and ultra-smooth tetrahedral carbon films by magnetron sputtering, the device includes a workpiece disk 6 powered by a bias power supply 5 and a magnetron sputtering target 2 powered by a power supply II3, the magnetron In front of the sputtering target 2 is provided a coil 1 powered by a power supply III4.

[0031] Coil 1 is 5cm high and has 1800 turns.

[0032] Both the bias power supply 5 and the power supply II 3 are DC power supply, AC power supply, high frequency, medium frequency pulse power supply, radio frequency power supply or microwave power supply.

[0033] Power supply III4 is a high-power pulse power supply. When the power is turned on, the magnetic field rises instantly, and when the power is not turned on, the magnetic field first rises and then disappears. The strong magnetic field will compress the plasma, increase the collision probability and electron temperature, and make the ionization...

Embodiment 2

[0036] The method for preparing super-hard and ultra-smooth tetrahedral carbon films by magnetron sputtering of the above-mentioned device, the coating material is provided by the magnetron sputtering target 2, and a direct current of 3-10A is provided to the magnetron sputtering target 2, and the sputtered carbon ions are When passing through the electromagnetic field, the transient magnetic field generated by the current with a peak value of 8-12A provided by the high-power pulse is compressed and heated to further ionize the passing carbon ions and particles, and the electron temperature reaches 8-10eV, and the high-energy carbon ions fly to the workpiece Disk 6 is deposited under the action of a DC bias of 100V to obtain a smooth carbon film. The film is prepared by magnetron sputtering without post-processing.

[0037] Prepare superhard and supersmooth pure carbon film on silicon substrate, the specific implementation is as follows:

[0038] 1) Routine cleaning: degreasi...

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Abstract

The invention belongs to the technical field of vacuum film plating, and discloses an apparatus for preparing a superhard super-smooth tetrahedral carbon film through magnetron sputtering. The apparatus comprises a workpiece disk whose power is supplied by a bias power supply, and a magnetron sputtering target whose power is supplied by a power supply II, and a coil whose power is supplied by a power supply III is arranged at the front of the magnetron sputtering target. The invention also discloses a method for preparing the superhard super-smooth tetrahedral carbon film through magnetron sputtering. According to the technical scheme, a high-power pulse magnetic field and magnetron sputtering are combined, the magnetron sputtering flexibility is improved and the film plating technological window is widened.

Description

technical field [0001] The invention belongs to the field of physical vapor deposition, and relates to a device and method for preparing superhard and ultrasmooth tetrahedral carbon films by magnetron sputtering. The device and method can also be used for the growth of superhard nitride films and carbide films. Background technique [0002] Arc ion plating is widely used in the preparation of wear-resistant, anti-corrosion and optical films due to its high deposition efficiency (CN201010136163). However, the large droplets produced by arc ion plating reduce the density and continuity of the film, resulting in the growth of Poor film adhesion and high surface roughness (deposited film requires secondary polishing and other factors, making it difficult to be applied on a large scale on the surface of precision dynamic contact parts, and secondary polishing increases the cost. For the droplet caused by the arc (1.Tetrahedral Amorphous Carbon (ta-C) Ultra Thin Films for Slider O...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 张斌张俊彦高凯雄强力王健
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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