Method for pulse inversion electrodeposition of thick tungsten coating layer

A pulse reverse, electrodeposition technology, applied in the field of surface treatment, can solve the problems of low electrodeposition efficiency, uneven coating distribution, uneven surface, etc., to achieve increased electrodeposition efficiency, good flatness, and compact surface structure. Effect

Active Publication Date: 2015-12-30
NANJING UNIV OF INFORMATION SCI & TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] Purpose of the invention: The present invention provides a method for pulse reverse electrodeposition thick tungsten coating to solve the problem of low electrodeposition efficiency, uneven coating distribution and uneven surface in the existing single pulse electrodeposition thick tungsten coating technology The problem

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  • Method for pulse inversion electrodeposition of thick tungsten coating layer
  • Method for pulse inversion electrodeposition of thick tungsten coating layer
  • Method for pulse inversion electrodeposition of thick tungsten coating layer

Examples

Experimental program
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Effect test

Embodiment 1

[0031] a. Pretreatment: Use wire cutting to cut low-activation steel plate and tungsten plate into sheet samples, and then use 240#, 500#, 800# sandpaper to polish, then use acetone to ultrasonically clean the surface of the anode and the substrate, and dry spare.

[0032] b. Molten salt preparation: Before the molten salt preparation, sodium tungstate and tungsten trioxide were dried at 250°C for 12 hours. Sodium tungstate and tungsten trioxide with a molar ratio of 3:1 are ground and mixed evenly, then put into a high-purity alumina crucible, heated to 850°C in a crucible resistance furnace, and kept warm for use.

[0033] c. Pulse reverse electrodeposition: connect the treated low-activation steel plate and tungsten plate through platinum wire and put them into molten salt until completely submerged. The low-activation steel plate is used as the cathode and the tungsten plate is used as the anode. Double anodes are used to place the anode and cathode in parallel. The elect...

Embodiment 2

[0040] a. Pretreatment: Use wire cutting to cut low-activation steel plate and tungsten plate into sheet samples, and then use 240#, 500#, 800# sandpaper to polish, then use acetone to ultrasonically clean the surface of the anode and the substrate, and dry spare.

[0041] b. Molten salt preparation: Before the molten salt preparation, sodium tungstate and tungsten trioxide were dried at 250°C for 12 hours. Sodium tungstate and tungsten trioxide with a molar ratio of 3:1 are ground and mixed evenly, then put into a high-purity alumina crucible, heated to 900°C in a crucible resistance furnace, and kept warm for use.

[0042]c. Pulse reverse electrodeposition: connect the treated low-activation steel plate and tungsten plate through platinum wire and put them into molten salt until completely submerged. The low-activation steel plate is used as the cathode and the tungsten plate is used as the anode. Double anodes are used to place the anode and cathode in parallel. The electr...

Embodiment 3

[0048] a. Pretreatment: Use wire cutting to cut low-activation steel plate and tungsten plate into sheet samples, and then use 240#, 500#, 800# sandpaper to polish, then use acetone to ultrasonically clean the surface of the anode and the substrate, and dry spare.

[0049] b. Molten salt preparation: Before the molten salt preparation, sodium tungstate and tungsten trioxide were dried at 250°C for 12 hours. Sodium tungstate and tungsten trioxide with a molar ratio of 3:1 are ground and mixed evenly, then put into a high-purity alumina crucible, heated to 900°C in a crucible resistance furnace, and kept warm for use.

[0050] c. Pulse reverse electrodeposition: connect the treated low-activation steel plate and tungsten plate through platinum wire and put them into molten salt until completely submerged. The low-activation steel plate is used as the cathode and the tungsten plate is used as the anode. Double anodes are used to place the anode and cathode in parallel. The elect...

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Abstract

The invention discloses a method for pulse inversion electrodeposition of a thick tungsten coating layer. The method comprises the steps of pretreatment, molten smelt preparation, pulse inversion electrodeposition and ultrasonic cleaning. The method improves the electrodeposition efficiency without changing the quality of the surface of the tungsten coating layer, and controls the roughness of the surface of the tungsten coating layer, so the surface of the produced thick tungsten coating layer has compact structure, good flatness and no cracks; and compared with a single phase pulse electrodeposition technology, a pulse inversion technology adopted in the invention allows the projecting part of the coating layer to be strong dissolved and leveled through highly-uneven anode current distribution caused by reverse current, so the cathode surface metal ion concentration rapidly rises, and the concentration polarization is reduced, thereby the surface of the tungsten coating layer produced in the invention is flattened, and the electrodeposition efficiency is increased. The thickness of the tungsten coating layer produced after pulse inversion electrodeposition for 10h reaches 220[mu]m, and the surface roughness is 6.673[mu]m; and the pulse inversion electrodeposition technology improves the electrodeposition rate without reducing the quality of the surface of the coating layer.

Description

technical field [0001] The invention belongs to the technical field of surface treatment, in particular to a method for pulse reverse electrodeposition thick tungsten coating. Background technique [0002] Metal tungsten has very high melting point, high strength, small electron spillover work, good chemical stability and high temperature conductivity and other good physical and chemical properties, so tungsten has a good role in the electronics industry and aerospace technology. Application prospects, such as extraction in X-ray machines, heat shielding materials, semiconductor substrates for micro-electromechanical systems, etc. However, metal tungsten has poor processing performance, is very brittle at room temperature, and is difficult to machine at room temperature, and the reserves of tungsten are small and expensive. Forming a metal tungsten coating on the surface of components made of ordinary materials can not only reduce processing difficulties, but also save raw ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/66C25D5/18
Inventor 江凡邵绍峰吴红艳
Owner NANJING UNIV OF INFORMATION SCI & TECH
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