Novel silicon-ytterbium quantum surface plasma light source and preparation method thereof
A plasma and quantum surface technology, applied in the field of plasma light source and its preparation, achieves the effect of low cost, easy implementation and simple structure
Inactive Publication Date: 2015-12-30
GUIZHOU UNIV
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Problems solved by technology
[0005] The object of the present invention is to provide a novel silicon ytterbium quantum surface plasma light source and its preparation method, which solves the problem of using low-frequency pumping and high-frequency light emission, and provides a new light source for semiconductor lighting and a new method for optical interconnection of silicon chips. Light source, and easy to industrialize
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Embodiment 1
[0023] Embodiment 1 of the present invention: a novel silicon ytterbium quantum surface plasma light source is shown in the figure. In the figure, the slanted downward arrow represents the pump light, and the vertical arrow represents the plasma light emission, including the silicon substrate 1. The upper surface of the silicon substrate 1 is provided with a Purcell cavity array structure distributed at intervals, and a group of silicon ytterbium quantum planes composed of a silicon oxide film 2 and an ytterbium film 3 is provided in each Purcell cavity array structure. In the Purcell cavity array structure, the diameter of the Purcell cavity is 10 μm, and the period interval is 50 μm; the thickness of the silicon oxide film 2 is 6 nm, and the thickness of the ytterbium film 3 is 15 nm.
[0024] The preparation method of novel silicon ytterbium quantum surface plasma light source comprises the following steps
[0025] 1) Pretreatment: P-type doping is performed on the single c...
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Abstract
The invention provides a novel silicon-ytterbium quantum surface plasma light source and a preparation method thereof. A silicon-ytterbium quantum surface plasma light source structure is formed on a silicon substrate, quite strong high-frequency photons can be emitted under the effect of low-frequency pumped light, plasma luminescence has the characteristics of excitation of a high frequency by a low frequency and spherical luminescence, through optical pumping, plasma strong luminescence (the external quantum efficiency is greater than 50%) in a visible light area and luminescence in an optical communication wave band of 1400nm to 1600nm are realized, and the plasma luminescence has the characteristics of excitation of the high frequency by the low frequency and spherical luminescence. According to the invention, the method is different from luminescence mechanisms of a semiconductor LED and an LD light source, has a brand new luminescence physical mechanism and a model and employs a new PLE-PLD composite nanometer preparation method; and the problems of low-frequency pumping and high-frequency luminescence are solved, a new light source for illumination of a semiconductor and a new light source for optical interconnection of a silicon chip are provided, and the method can be well applied to the novel silicon-ytterbium quantum surface plasma light source.
Description
technical field [0001] The invention relates to the technical field of semiconductor lighting and nanophotonic materials and devices, in particular to a novel silicon ytterbium quantum surface plasma light source and a preparation method thereof. Background technique [0002] At present, we are in the post-information age, which is characterized by the transition from the electronic information stage to the photon information stage. Now the conversion process with photons as the information carrier has been completed, such as the realization of all-optical optical fiber communication and optical communication. Today's development has entered into on-chip optoelectronic integration and chip-level all-opticalization, which is the key to realizing optical quantum information processing and optical quantum information calculation, and making light sources and propagation nodes for optical interconnection on silicon chips is a bottleneck. work. Plasma light sources on silicon ch...
Claims
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Login to View More IPC IPC(8): H01J65/04H01J9/00
Inventor 黄伟其
Owner GUIZHOU UNIV