A pd-mos 2 Heterojunction photovoltaic solar cell device and preparation method thereof

A solar cell, pd-mos2 technology, applied in photovoltaic power generation, electrical components, semiconductor devices, etc., can solve the problems of improving the axial conductivity of MoS2, not adopting effective technical methods, and low short-circuit current density, etc., to achieve good thermal stability and chemical stability, improved photoconversion efficiency, and reduced defect density

Inactive Publication Date: 2017-01-18
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the above two solar cell devices have not adopted effective technical methods to improve the MoS 2 Axial conductivity of
This results in lower short-circuit current densities of existing devices, hindering the improvement of their photovoltaic performance

Method used

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  • A pd-mos <sub>2</sub> Heterojunction photovoltaic solar cell device and preparation method thereof
  • A pd-mos <sub>2</sub> Heterojunction photovoltaic solar cell device and preparation method thereof
  • A pd-mos <sub>2</sub> Heterojunction photovoltaic solar cell device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] The preparation method is as follows:

[0063] The first step, Pd-MoS 2 Target preparation steps

[0064] According to the number of moles, take 1 part of Pd metal particles with a purity of 99.99% or more, and MoS with a purity of 99.9% or more 2 99 parts of granules, blended and ground into a ball mill until the particle size is 500-800 mesh powder;

[0065] Put the powder obtained by grinding into the mold of the tablet press, and place it on the tablet press. The pressure of the tablet press is 20-25MPa, the pressing time is 1 hour, and it is pressed into a cylindrical shape with a thickness of 3-5mm and a diameter of 60mm. target;

[0066] The second step, silicon substrate surface passivation step

[0067] Select an n-type Si single crystal substrate with a resistivity of 1-10 Ω cm and a crystal plane orientation of (100) plane, and ultrasonically clean it in alcohol, acetone and deionized water for 180 s in sequence;

[0068] Take it out and place it in a hy...

Embodiment 2

[0081] (Explanation: This embodiment is a comparative example, and the target material used is pure MoS 2 target. That is, in the preparation process of the target, Pb metal is not used for MoS 2 for doping)

[0082] The first step, pure MoS 2 Target preparation steps

[0083] Take MoS with a purity of more than 99.9% 2 Particles are ground into a ball mill until the particle size is 500-800 mesh powder;

[0084] Put the powder obtained by grinding into the mold of the tablet press, and place it on the tablet press. The pressure of the tablet press is 20-25MPa, the pressing time is 1 hour, and it is pressed into a cylindrical shape with a thickness of 3-5mm and a diameter of 60mm. target;

[0085] All the other are the same as in Example 1.

[0086] Product performance test results:

[0087] After testing, at 30mWcm -2 Under white light conditions, the prepared MoS 2 The photoexcited current density of the heterojunction photovoltaic solar cell device is 3.5mAcm -2 ...

Embodiment 3

[0089] The first step, Pd-MoS 2 Target preparation steps

[0090] According to the number of moles, take 0.5 part of Pd metal particles with a purity of 99.99% or more, and MoS with a purity of 99.9% or more 2 99.5 parts of granules, blended and ground into a ball mill to a powder with a particle size of 500-800 mesh;

[0091]Put the powder obtained by grinding into the mold of the tablet press, and place it on the tablet press. The pressure of the tablet press is 20-25MPa, the pressing time is 1 hour, and it is pressed into a cylindrical shape with a thickness of 3-5mm and a diameter of 60mm. target;

[0092] All the other are the same as in Example 1.

[0093] Product performance test results:

[0094] After testing, at 30mWcm -2 Under white light conditions, the prepared Pd-MoS 2 The photoexcited current density of the heterojunction photovoltaic solar cell device is 5.2mAcm -2 , open circuit voltage 0.33V, conversion efficiency 2.8%.

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Abstract

The invention discloses a Pd-MoS2 heterojunction photovoltaic solar cell device, which is a layered structure, which sequentially includes a Pd metal front electrode, a Pd-MoS2 thin film layer, a first SiO2 insulating buffer layer, and a Si single crystal substrate. sheet, a second SiO2 insulating buffer layer and a metal In back electrode. Its preparation method mainly adopts DC magnetron sputtering technology, and uses high-energy electrons to bombard the surface of Pd-MoS2 target material to sputter out a large number of ions and deposit a thin film on the surface of Si single crystal substrate after passivation treatment; and prepare Take out the front electrode and the back electrode layer, and it is ready. Compared with similar products in the prior art, the open-circuit voltage, short-circuit current density and light conversion efficiency of the Pd-MoS2 heterojunction photovoltaic solar cell device of the present invention are respectively increased by more than 60%, 160% and 300%. The invention has the advantages of simple technology, green production process and products, high yield and low manufacturing cost, and is suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to a semiconductor heterojunction-based solar cell device and a preparation method thereof, in particular to a Pd metal-doped MoS 2 A heterojunction photovoltaic solar cell device and its preparation method. Background technique [0002] Photovoltaic utilization, that is, photovoltaic power generation, is one of the fastest growing and most economically potential energy development fields in recent years, and solar cells are the core part of photovoltaic power generation systems. For a long time, silicon (Si) semiconductors have dominated the field of solar cell development. At the same time, in order to achieve a substantial increase in the conversion efficiency of solar cells and a significant reduction in production costs, researchers at home and abroad are constantly trying various new semiconductor materials, among which molybdenum disulfide (MoS 2 ) deserves more attention and research. [0003] Intrinsic MoS 2 Belonging...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/072H01L31/18
CPCH01L31/072H01L31/1828Y02E10/543Y02P70/50
Inventor 郝兰众刘云杰高伟韩治德薛庆忠
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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