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Pd-MoS2 heterojunction photovoltaic solar cell device and preparation method thereof

A solar cell, pd-mos2 technology, applied in photovoltaic power generation, electrical components, semiconductor devices, etc., can solve the problems of improving the axial conductivity of MoS2, not taking effective technical methods, low short-circuit current density, etc., and achieving good thermal stability. performance and chemical stability, improved photoconversion efficiency, and reduced defect density

Inactive Publication Date: 2016-01-06
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the above two solar cell devices have not adopted effective technical methods to improve the MoS 2 Axial conductivity of
This results in lower short-circuit current densities of existing devices, hindering the improvement of their photovoltaic performance

Method used

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  • Pd-MoS2 heterojunction photovoltaic solar cell device and preparation method thereof
  • Pd-MoS2 heterojunction photovoltaic solar cell device and preparation method thereof
  • Pd-MoS2 heterojunction photovoltaic solar cell device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] The preparation method is as follows:

[0063] The first step, Pd-MoS 2 Target preparation steps

[0064] Take 1 part of Pd metal particles with a purity of 99.99% or more and MoS with a purity of 99.9% or more according to the mole fractions 2 99 parts of particles, blended and pulverized into a ball mill to a particle size of 500-800 mesh powder;

[0065] Put the powder obtained by grinding into a tablet press mold and place it on the tablet press. The pressure of the press is 20-25MPa, the pressing time is 1 hour, and it is pressed into a cylindrical target with a thickness of 3-5mm and a diameter of 60mm. material;

[0066] The second step is the passivation step of the silicon substrate surface

[0067] Select an n-type Si single crystal substrate with a resistivity of 1-10Ω·cm and a crystal plane orientation of (100) planes, and ultrasonically clean them in alcohol, acetone and deionized water for 180s in sequence;

[0068] Take it out and place it in a hydrofluoric acid so...

Embodiment 2

[0081] (Note: This example is a comparative example, the target material used is pure MoS 2 Target. That is, in the preparation process of the target, Pb metal is not used to MoS 2 Doping treatment)

[0082] The first step, pure MoS 2 Target preparation steps

[0083] Take MoS with purity above 99.9% 2 The particles are pulverized into a ball mill to a particle size of 500-800 mesh powder;

[0084] Put the powder obtained by grinding into a tablet press mold and place it on the tablet press. The pressure of the press is 20-25MPa, the pressing time is 1 hour, and it is pressed into a cylindrical target with a thickness of 3-5mm and a diameter of 60mm. material;

[0085] The rest are the same as in Example 1.

[0086] Product performance test results:

[0087] After testing, at 30mWcm -2 Under the white light conditions, the prepared MoS 2 The light excitation current density of the heterojunction photovoltaic solar cell device is 3.5mAcm -2 , The open circuit voltage is 0.23V, and the c...

Embodiment 3

[0089] The first step, Pd-MoS 2 Target preparation steps

[0090] Take 0.5 parts of Pd metal particles with a purity of 99.99% or more and MoS with a purity of 99.9% or more according to the mole fractions 2 99.5 parts of particles, blended and pulverized into a ball mill to a particle size of 500-800 mesh powder;

[0091] Put the powder obtained by grinding into a tablet press mold and place it on the tablet press. The pressure of the press is 20-25MPa, the pressing time is 1 hour, and it is pressed into a cylindrical target with a thickness of 3-5mm and a diameter of 60mm. material;

[0092] The rest are the same as in Example 1.

[0093] Product performance test results:

[0094] After testing, at 30mWcm -2 Under the white light conditions, the Pd-MoS prepared 2 The light excitation current density of the heterojunction photovoltaic solar cell device is 5.2mAcm -2 , The open circuit voltage is 0.33V, and the conversion efficiency is 2.8%.

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Abstract

The invention discloses a Pd-MoS2 heterojunction photovoltaic solar cell device. The Pd-MoS2 heterojunction photovoltaic solar cell device is of a layered structure and sequentially comprises a Pd metal front electrode, a Pd-MoS2 thin film layer, a first SiO2 insulation buffer layer, a Si monocrystal substrate, a second SiO insulation buffer layer and a metal In back electrode from top to bottom. The preparation method mainly adopts a DC magnetron sputtering technique and comprises the following steps of: bombarding the surface of a Pd-MoS2 target with high-energy electrons so that a large amount of ions are sputtered; depositing a thin film on the surface of the Si monocrystal substrate subjected to passivation treatment; and preparing front electrode and back electrode layers and completing. The open-circuit voltage, the short-circuit current density and the light conversion efficiency of the Pd-MoS2 heterojunction photovoltaic solar cell device disclosed by the invention are respectively improved by over 60%, 160% and 300% compared with the similar products in the prior art. The Pd-MoS2 heterojunction photovoltaic solar cell device disclosed by the invention has the advantages of simplicity in process, greenness and environment protection on the production process and a product, high finished product rate and low manufacturing cost, and is suitable for industrial production at a large scale.

Description

Technical field [0001] The invention relates to a solar cell device based on a semiconductor heterojunction and a preparation method thereof, in particular to a Pd metal-doped MoS 2 Heterojunction photovoltaic solar cell device and preparation method thereof. Background technique [0002] Photoelectric utilization, that is, photovoltaic power generation, is one of the fastest growing and most economically potential energy development fields in recent years, and solar cells are the core part of photovoltaic power generation systems. Silicon (Si) semiconductors have always played a dominant role in the field of solar cell research and development. At the same time, in order to achieve a significant increase in the conversion efficiency of solar cells and a significant reduction in production costs, researchers at home and abroad continue to try various new semiconductor materials, including molybdenum disulfide (MoS 2 ) Is more worthy of attention and research. [0003] Intrinsic Mo...

Claims

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Application Information

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IPC IPC(8): H01L31/072H01L31/18
CPCH01L31/072H01L31/1828Y02E10/543Y02P70/50
Inventor 郝兰众刘云杰高伟韩治德薛庆忠
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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