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Diffusion process of a crystalline silicon high-efficiency high-resistivity solar cell

A diffusion process and high square resistance technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as difficult control of square resistance uniformity, high concentration of dead layer on the front surface, low VOC, etc., and achieve a large room for process adjustment, ISC and VOC improve and reduce the effect of process running time

Active Publication Date: 2018-11-30
TRINA SOLAR CO LTD +1
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Problems solved by technology

[0005] In order to overcome the technical problems of difficult control of square resistance uniformity, long time, high concentration of dead layer on the front surface and low overall VOC in the diffusion process in the prior art, the present invention provides a high-efficiency high square resistance cell of crystalline silicon. Diffusion technology to improve cell square resistance and photoelectric conversion efficiency

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  • Diffusion process of a crystalline silicon high-efficiency high-resistivity solar cell
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  • Diffusion process of a crystalline silicon high-efficiency high-resistivity solar cell

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[0032] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings.

[0033] like figure 2 , 3 As shown, the diffusion process of the crystalline silicon high-efficiency high-resistivity battery sheet of the present invention comprises the following steps:

[0034] (1) Into the furnace; the process of entering the furnace is: put the silicon wafer into the diffusion furnace, maintain the temperature at 750-800°C, and feed nitrogen gas with a flow rate of 6000-8000sccm for 10-20min;

[0035] (2) Low-temperature oxidation, that is, to perform low-temperature oxidation on the silicon wafers after entering the furnace; the process is: maintain the temperature at 750-800°C, feed nitrogen with a nitrogen flow rate of 6000-8000 sccm, feed dry oxygen, dry oxygen The flow rate is 1000-2000sccm, and th...

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Abstract

The present invention relates to a diffusion technique of a crystal-silicon efficient high-sheet-resistance battery piece. The diffusion technique comprises the steps of furnace entering, low-temperature oxidation, low temperature gas reaction deposition, low temperature dopant redistribution, high temperature gas reaction deposition, cooling dopant redistribution, low temperature gas reaction deposition, low temperature dopant redistribution and discharge. With adoption of the diffusion technique provided by the present invention, photoelectric conversion efficiency of the battery pieces can be raised, the production time is shortened, and the production efficiency is raised.

Description

technical field [0001] The invention relates to a diffusion process, in particular to a diffusion process of crystalline silicon high-efficiency and high-resistance cells, and belongs to the technical field of solar cell processing technology. Background technique [0002] In the production process of solar cells, the PN junction formed in the diffusion stage is called the heart of the solar cell. The size of the PN junction sheet resistance has an important impact on the performance of the cell. Most of the sheet resistance of existing solar cells is 50Ω-60Ω. This is for Ensure that good ohmic contact is formed between the electrode grid lines and the battery sheet during screen printing. However, heavy doping causes serious recombination of carriers, resulting in smaller short-circuit current and open-circuit voltage. Therefore, if the battery can be guaranteed to have a good ohmic contact, and the short-circuit current and open-circuit voltage of the battery can be incre...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/223H01L21/324H01L31/18
CPCH01L21/223H01L21/324H01L31/1804H01L31/186Y02E10/547Y02P70/50
Inventor 王芹芹
Owner TRINA SOLAR CO LTD
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